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Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
Ha, S. (Autor:in) / Mieszkowski, P. (Autor:in) / Rowland, L. B. (Autor:in) / Skowronski, M. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 231-234
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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