SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor

Leone, S. / Mauceri, M. / Pistone, G. et al. | British Library Online Contents | 2006

Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions

Condorelli, G. / Mauceri, M. / Pistone, G. et al. | British Library Online Contents | 2009

4H-SiC Epitaxial Growth on 2^o Off-Axis Substrates using Trichlorosilane (TCS)

Aigo, T. / Ito, W. / Tsuge, H. et al. | British Library Online Contents | 2012

3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor

Anzalone, R. / Severino, A. / D Arrigo, G. et al. | British Library Online Contents | 2009

Low temperature, high growth rate epitaxial silicon and silicon germanium alloy films

Todd, M. A. / Weeks, K. D. | British Library Online Contents | 2004