Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers: Fid-Bau Portal

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

Mahadik, N.A. / Stahlbush, R.E. / Nath, A. / Tadjer, M.J. / Imhoff, E.A. / Feygelson, B.N. / Nipoti, R.

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Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

Mahadik, N.A. / Stahlbush, R.E. / Nath, A. / Tadjer, M.J. / Imhoff, E.A. / Feygelson, B.N. / Nipoti, R.

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

Mahadik, N.A. / Stahlbush, R.E. / Nath, A. / Tadjer, M.J. / Imhoff, E.A. / Feygelson, B.N. / Nipoti, R.

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Titel:

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

Beteiligte:

Mahadik, N.A. (Autor:in) / Stahlbush, R.E. (Autor:in) / Nath, A. (Autor:in) / Tadjer, M.J. (Autor:in) / Imhoff, E.A. (Autor:in) / Feygelson, B.N. (Autor:in) / Nipoti, R. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T.

Erschienen in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 324-327

MATERIALS SCIENCE FORUM ; 778/780

Erscheinungsdatum:

01.01.2014

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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Tsuchida, H. / Miyanagi, T. / Kamata, I. et al. | British Library Online Contents | 2005

Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers

Kamata, I. / Nagano, M. / Tsuchida, H. | British Library Online Contents | 2010

Effects of Nitrogen Doping on the Morphology of Basal Plane Dislocations in 4H-SiC Epilayers

Zhang, X. / Nagano, M. / Tsuchida, H. | British Library Online Contents | 2012

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