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Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
1700V, 5.5mOhm-cm^2 4H-SiC DMOSFET with Stable 225^oC Operation
1700V, 5.5mOhm-cm^2 4H-SiC DMOSFET with Stable 225^oC Operation
1700V, 5.5mOhm-cm^2 4H-SiC DMOSFET with Stable 225^oC Operation
Matocha, K. (Autor:in) / Chatty, K. (Autor:in) / Banerjee, S. (Autor:in) / Rowland, L.B. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H. / Hatayama, T.
01.01.2014
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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