Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications
Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications
Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications
Gajewski, D.A. (Autor:in) / Ryu, S.H. (Autor:in) / Das, M. (Autor:in) / Hull, B. (Autor:in) / Young, J. (Autor:in) / Palmour, J.W. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M.
01.01.2014
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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