Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
Huang, J. J. (Autor:in) / Tsai, Y. J. (Autor:in) / Tsai, M. C. (Autor:in) / Huang, L. T. (Autor:in) / Lee, M. H. (Autor:in) / Chen, M. J. (Autor:in)
APPLIED SURFACE SCIENCE ; 324 ; 662-668
01.01.2015
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Quantification of nitrogen profiles in HfSiON films for gate dielectrics
British Library Online Contents | 2004
|Structural properties and electrical characteristics of high-k Tm2Ti2O7 gate dielectrics
British Library Online Contents | 2010
|Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics
British Library Online Contents | 2011
|British Library Online Contents | 2004
Electrical characterization of high-k gate dielectrics on semiconductors
British Library Online Contents | 2008
|