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TiSiOx gate dielectrics produced by reactive sputtering for high performance InGaZnO thin film transistors
TiSiOx gate dielectrics produced by reactive sputtering for high performance InGaZnO thin film transistors
TiSiOx gate dielectrics produced by reactive sputtering for high performance InGaZnO thin film transistors
Fu, Yi-Zhou (Autor:in) / Li, Jun (Autor:in) / Zhao, Cheng-Yu (Autor:in) / Huang, Chuan-Xin (Autor:in) / Zhang, Jian-Hua (Autor:in) / Li, Xi-Feng (Autor:in) / Jiang, Xue-Yin (Autor:in) / Zhang, Zhi-Lin (Autor:in)
Materials science in semiconductor processing ; 61 ; 125-130
01.01.2017
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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