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The effect of oxide layer thickness on the quantification of 1.5MeV γ–radiation induced interface traps in the Ag/SiO2/Si MOS devices
The effect of oxide layer thickness on the quantification of 1.5MeV γ–radiation induced interface traps in the Ag/SiO2/Si MOS devices
The effect of oxide layer thickness on the quantification of 1.5MeV γ–radiation induced interface traps in the Ag/SiO2/Si MOS devices
Khan, M. Rizwan (Autor:in) / Ishfaq, Muhammad (Autor:in) / Ali, Awais (Autor:in) / Bhatti, A.S. (Autor:in)
Materials science in semiconductor processing ; 68 ; 30-37
01.01.2017
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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