Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture

Chan, T. K. / Koh, S. Y. / Fang, V. et al. | British Library Online Contents | 2014

Non-melt laser annealing of Plasma Implanted Boron for ultra shallow junctions in Silicon

Florakis, A. / Misra, N. / Grigoropoulos, C. et al. | British Library Online Contents | 2008

Clustering of ultra-low-energy implanted boron in silicon during activation annealing

Schroer, E. / Privitera, V. / Priolo, F. et al. | British Library Online Contents | 2000

Defect annealing in ion implanted silicon carbide

Calcagno, L. / Grimaldi, M. G. / Musumeci, P. | British Library Online Contents | 1997

Simulations of arsenic and boron co-implanted in silicon during RTA for ultra-shallow junctions realizations

Merabet, A. | British Library Online Contents | 2005