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Simulations of arsenic and boron co-implanted in silicon during RTA for ultra-shallow junctions realizations
Simulations of arsenic and boron co-implanted in silicon during RTA for ultra-shallow junctions realizations
Simulations of arsenic and boron co-implanted in silicon during RTA for ultra-shallow junctions realizations
Merabet, A. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 419-423
01.01.2005
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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