Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 films
Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 films
Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 films
Tao, Jiajia (Autor:in) / Lu, Hong-Liang (Autor:in) / Gu, Yang (Autor:in) / Ma, Hong-Ping (Autor:in) / Li, Xing (Autor:in) / Chen, Jin-Xin (Autor:in) / Liu, Wen-Jun (Autor:in) / Zhang, Hao (Autor:in) / Feng, Ji-Jun (Autor:in)
Applied surface science ; 476 ; 733-740
01.01.2019
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
| British Library Online Contents | 2019
Growth of GaN nanowires through nitridation Ga2O3 films deposited by electrophoresis
| British Library Online Contents | 2003
Growth mechanism of In–doped β–Ga2O3 nanowires deposited by radio frequency powder sputtering
| British Library Online Contents | 2016
| British Library Online Contents | 2016
Growth mechanism of In–doped β–Ga2O3 nanowires deposited by radio frequency powder sputtering
| British Library Online Contents | 2016