Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks

Liang, Shuang / He, Gang / Wang, Die et al. | British Library Online Contents | 2019

Electrical characterization of MFeOS gate stacks for ferroelectric FETs

Kumar, A. / Rao, A. / Goswami, M. et al. | British Library Online Contents | 2013

Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks

Kanashima, T. / Yamashiro, R. / Zenitaka, M. et al. | British Library Online Contents | 2017

Thermal stability and chemical bonding states of AlOxNy/Si gate stacks revealed by synchrotron radiation photoemission spectroscopy

He, G. / Toyoda, S. / Shimogaki, Y. et al. | British Library Online Contents | 2010

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

Gao, Juan / He, Gang / Xiao, Dongqi et al. | British Library Online Contents | 2017