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Aluminum nitride ceramic substrate and preparation method thereof
The invention belongs to the technical field of ceramic materials, and particularly relates to an aluminum nitride ceramic substrate and a preparation method thereof. The preparation method comprisesthe steps of pulping, vacuum defoaming, tape casting, glue discharging and sintering, and glue discharging comprises the following three processes: in the first-stage glue discharging process, the temperature is increased to 350-450 DEG C, and heat preservation is performed for 50-90 minutes; in the second-stage rubber discharging process, the temperature is increased to 650-750 DEG C, and heat preservation is conducted for 25-45 min; and in the third-stage rubber discharging process, the temperature is reduced to 400-500 DEG C, and heat preservation is conducted for 80-100 min. The aluminum nitride ceramic obtained in the invention is more compact, and the aluminum nitride blank obtained after three-stage rubber removal method rubber removal is intact and flat, does not contain carbon impurities, and has more excellent performance.
本发明属于陶瓷材料技术领域,具体涉及一种氮化铝陶瓷基板及其制备方法。所述制备方法包括制浆、真空除泡、流延成型、排胶和烧结,所述排胶包括以下三段过程:第一段排胶过程:升温到350℃‑450℃,保温50min‑90min;第二段排胶过程:升温到650℃‑750℃,保温25min‑45min;第三段排胶过程:降温至400℃‑500℃,保温80min‑100min。本发明得到的氮化铝陶瓷更致密,三段式排胶法排胶后得到的氮化铝坯片完好平整不含碳杂质,性能更优良。
Aluminum nitride ceramic substrate and preparation method thereof
The invention belongs to the technical field of ceramic materials, and particularly relates to an aluminum nitride ceramic substrate and a preparation method thereof. The preparation method comprisesthe steps of pulping, vacuum defoaming, tape casting, glue discharging and sintering, and glue discharging comprises the following three processes: in the first-stage glue discharging process, the temperature is increased to 350-450 DEG C, and heat preservation is performed for 50-90 minutes; in the second-stage rubber discharging process, the temperature is increased to 650-750 DEG C, and heat preservation is conducted for 25-45 min; and in the third-stage rubber discharging process, the temperature is reduced to 400-500 DEG C, and heat preservation is conducted for 80-100 min. The aluminum nitride ceramic obtained in the invention is more compact, and the aluminum nitride blank obtained after three-stage rubber removal method rubber removal is intact and flat, does not contain carbon impurities, and has more excellent performance.
本发明属于陶瓷材料技术领域,具体涉及一种氮化铝陶瓷基板及其制备方法。所述制备方法包括制浆、真空除泡、流延成型、排胶和烧结,所述排胶包括以下三段过程:第一段排胶过程:升温到350℃‑450℃,保温50min‑90min;第二段排胶过程:升温到650℃‑750℃,保温25min‑45min;第三段排胶过程:降温至400℃‑500℃,保温80min‑100min。本发明得到的氮化铝陶瓷更致密,三段式排胶法排胶后得到的氮化铝坯片完好平整不含碳杂质,性能更优良。
Aluminum nitride ceramic substrate and preparation method thereof
一种氮化铝陶瓷基板及其制备方法
WANG QUN (Autor:in) / WU XINRU (Autor:in) / JIN XIN (Autor:in) / LI XIAODONG (Autor:in)
25.09.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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