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Aluminum nitride ceramic substrate and preparation method and application thereof
The invention discloses an aluminum nitride ceramic substrate and a preparation method and application thereof, and relates to the technical field of aluminum nitride ceramic materials. The preparation method of the aluminum nitride ceramic substrate comprises the following steps: S1, preparing an aluminum nitride ceramic material through a vacuum pressureless sintering method; s2, oxidizing the aluminum nitride ceramic material in an air atmosphere to obtain an aluminum nitride ceramic substrate; the aluminum nitride ceramic material comprises the following raw materials: aluminum nitride, zirconium nitride and rare earth oxide. The prepared aluminum nitride ceramic substrate has high thermal conductivity and high bending strength, and can be applied to electronic component substrates.
本发明公开了一种氮化铝陶瓷基板及其制备方法和应用，涉及氮化铝陶瓷材料技术领域。氮化铝陶瓷基板的制备方法，包括：S1，通过真空无压烧结法制备氮化铝陶瓷材料；S2，将所述氮化铝陶瓷材料在空气气氛的条件下进行氧化，得到氮化铝陶瓷基板；其中，所述氮化铝陶瓷材料的原料包括氮化铝、氮化锆以及稀土氧化物。本发明制备得到的氮化铝陶瓷基板具有高热导以及高抗弯强度，可应用于电子元器件基板中。
Aluminum nitride ceramic substrate and preparation method and application thereof
The invention discloses an aluminum nitride ceramic substrate and a preparation method and application thereof, and relates to the technical field of aluminum nitride ceramic materials. The preparation method of the aluminum nitride ceramic substrate comprises the following steps: S1, preparing an aluminum nitride ceramic material through a vacuum pressureless sintering method; s2, oxidizing the aluminum nitride ceramic material in an air atmosphere to obtain an aluminum nitride ceramic substrate; the aluminum nitride ceramic material comprises the following raw materials: aluminum nitride, zirconium nitride and rare earth oxide. The prepared aluminum nitride ceramic substrate has high thermal conductivity and high bending strength, and can be applied to electronic component substrates.
本发明公开了一种氮化铝陶瓷基板及其制备方法和应用，涉及氮化铝陶瓷材料技术领域。氮化铝陶瓷基板的制备方法，包括：S1，通过真空无压烧结法制备氮化铝陶瓷材料；S2，将所述氮化铝陶瓷材料在空气气氛的条件下进行氧化，得到氮化铝陶瓷基板；其中，所述氮化铝陶瓷材料的原料包括氮化铝、氮化锆以及稀土氧化物。本发明制备得到的氮化铝陶瓷基板具有高热导以及高抗弯强度，可应用于电子元器件基板中。
Aluminum nitride ceramic substrate and preparation method and application thereof
一种氮化铝陶瓷基板及其制备方法和应用
WU SHANGHUA (Autor:in) / WANG LIANG (Autor:in) / SHENG PENGFEI (Autor:in) / NIE GUANGLIN (Autor:in) / GUO WEIMING (Autor:in)
31.01.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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