Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
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Preparation method of silicon nitride powder
The invention relates to the technical field of advanced ceramic powder preparation, and especially relates to a preparation method of silicon nitride powder. By utilizing the difference of thermal expansion coefficients of silicon and silicon nitride, the temperature is rapidly increased by 50 DEG C or above at the temperature increasing rate of 3 DEG C/min or above in vacuum or inert atmosphere,then cooling is conducted, and a silicon nitride layer on the surface of the silicon powder is broken, so the nitriding reaction rate is increased, and the nitriding period is shortened; nitrogen ornitrogen-hydrogen mixed gas is introduced only at 1350 DEG C or below in the whole preparation process, and silicon powder nitriding reaction can occur, so that the generation of beta silicon nitridecan be prevented, the generation of alpha-Si3N4 is more facilitated, and the content of the obtained alpha-Si3N4 is 93% or above; and the silicon nitride layer generated in the previous reaction can be used as a diluent for the next reaction after being broken, so that silicon nitride does not need to be additionally added as the diluent, the net yield of the silicon nitride powder is improved, and the production cost is reduced.
本发明涉及先进陶瓷粉体制备技术领域，尤其涉及一种氮化硅粉体的制备方法。本发明利用硅和氮化硅热膨胀系数的差异，在真空或惰性气氛中以3℃/min以上的升温速率迅速升温50℃以上然后降温，使硅粉表面的氮化硅层破碎，从而提高氮化反应速率，缩短氮化周期；本发明整个制备过程只有在1350℃以下才会通入氮气或氮氢混合气，硅粉氮化反应才会发生，可以防止β氮化硅生成，因此更有利于α‑Si3N4的生成，得到的α‑Si3N4含量在93％以上；本发明前一次反应生成的氮化硅层破碎后可以充当下一次反应的稀释剂，因此不需要额外加入氮化硅作为稀释剂，从而提高了氮化硅粉体的净产率，降低了生产成本。
Preparation method of silicon nitride powder
The invention relates to the technical field of advanced ceramic powder preparation, and especially relates to a preparation method of silicon nitride powder. By utilizing the difference of thermal expansion coefficients of silicon and silicon nitride, the temperature is rapidly increased by 50 DEG C or above at the temperature increasing rate of 3 DEG C/min or above in vacuum or inert atmosphere,then cooling is conducted, and a silicon nitride layer on the surface of the silicon powder is broken, so the nitriding reaction rate is increased, and the nitriding period is shortened; nitrogen ornitrogen-hydrogen mixed gas is introduced only at 1350 DEG C or below in the whole preparation process, and silicon powder nitriding reaction can occur, so that the generation of beta silicon nitridecan be prevented, the generation of alpha-Si3N4 is more facilitated, and the content of the obtained alpha-Si3N4 is 93% or above; and the silicon nitride layer generated in the previous reaction can be used as a diluent for the next reaction after being broken, so that silicon nitride does not need to be additionally added as the diluent, the net yield of the silicon nitride powder is improved, and the production cost is reduced.
本发明涉及先进陶瓷粉体制备技术领域，尤其涉及一种氮化硅粉体的制备方法。本发明利用硅和氮化硅热膨胀系数的差异，在真空或惰性气氛中以3℃/min以上的升温速率迅速升温50℃以上然后降温，使硅粉表面的氮化硅层破碎，从而提高氮化反应速率，缩短氮化周期；本发明整个制备过程只有在1350℃以下才会通入氮气或氮氢混合气，硅粉氮化反应才会发生，可以防止β氮化硅生成，因此更有利于α‑Si3N4的生成，得到的α‑Si3N4含量在93％以上；本发明前一次反应生成的氮化硅层破碎后可以充当下一次反应的稀释剂，因此不需要额外加入氮化硅作为稀释剂，从而提高了氮化硅粉体的净产率，降低了生产成本。
Preparation method of silicon nitride powder
一种氮化硅粉体的制备方法
ZHANG JING (Autor:in) / SUN FENG (Autor:in) / ZHANG WEIRU (Autor:in) / DONG TINGXIA (Autor:in) / XU XUEMIN (Autor:in) / JIANG ZIFEI (Autor:in) / DUAN WEIBIN (Autor:in) / WANG CHUNHE (Autor:in) / WANG MEI (Autor:in)
20.10.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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