Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Die filling method and preparation method of indium selenide target material
The invention belongs to the field of thin-film solar sputtering target materials, and discloses a die filling method and a preparation method of an indium selenide target material. Comprising the following steps: preparing a sheath with a cylindrical structure; filling into a mold; the mold-filled sheath is put into a furnace, the sheath is vacuumized and degassed through a degassing pipe while being heated, and after the vacuum degree in the sheath meets the requirement, heating and degassing are stopped, and the degassing pipe is closed; the degassed sheath is put into a hot isostatic pressing sintering furnace, and vacuumizing, pressurizing, heating sintering, cooling and pressure recycling are carried out; and discharging from the furnace, and removing the sheath to obtain the indium selenide target material. The indium selenide target material manufactured through the preparation method is a single-piece product, a plurality of pieces of products can be processed through one sheath, after the sheath is removed, only plane grinding and outer circle machining are needed, segmentation is not needed, the machining time can be shortened, and raw material loss caused by target material segmentation can be reduced. The density of the obtained indium selenide target material is greater than or equal to 99%, and the resistivity is less than or equal to 1M omega/cm.
本发明属于薄膜太阳能溅射靶材领域，公开了一种硒化铟靶材的装模方法和制备方法。包括以下步骤：准备圆柱状结构的包套；装模；将装模完成的包套放入炉内，边加热边通过除气管对包套进行抽真空除气，当包套内真空度达到要求后，停止加热、除气，封闭除气管；将除气完成的包套放入热等静压烧结炉中，进行抽真空、加压、升温烧结、降温及压力回收；出炉，去除包套，得硒化铟靶材。通过本发明制备方法制造出来的硒化铟靶材为单片产品，且一个包套可处理多片产品，去除包套后，只需进行平面磨及外圆加工即可，无需分割，可缩短机加时间，且可减少因靶材分割造成的原料损耗。所得硒化铟靶材致密度≥99%，电阻率≤1MΩ/cm。
Die filling method and preparation method of indium selenide target material
The invention belongs to the field of thin-film solar sputtering target materials, and discloses a die filling method and a preparation method of an indium selenide target material. Comprising the following steps: preparing a sheath with a cylindrical structure; filling into a mold; the mold-filled sheath is put into a furnace, the sheath is vacuumized and degassed through a degassing pipe while being heated, and after the vacuum degree in the sheath meets the requirement, heating and degassing are stopped, and the degassing pipe is closed; the degassed sheath is put into a hot isostatic pressing sintering furnace, and vacuumizing, pressurizing, heating sintering, cooling and pressure recycling are carried out; and discharging from the furnace, and removing the sheath to obtain the indium selenide target material. The indium selenide target material manufactured through the preparation method is a single-piece product, a plurality of pieces of products can be processed through one sheath, after the sheath is removed, only plane grinding and outer circle machining are needed, segmentation is not needed, the machining time can be shortened, and raw material loss caused by target material segmentation can be reduced. The density of the obtained indium selenide target material is greater than or equal to 99%, and the resistivity is less than or equal to 1M omega/cm.
本发明属于薄膜太阳能溅射靶材领域，公开了一种硒化铟靶材的装模方法和制备方法。包括以下步骤：准备圆柱状结构的包套；装模；将装模完成的包套放入炉内，边加热边通过除气管对包套进行抽真空除气，当包套内真空度达到要求后，停止加热、除气，封闭除气管；将除气完成的包套放入热等静压烧结炉中，进行抽真空、加压、升温烧结、降温及压力回收；出炉，去除包套，得硒化铟靶材。通过本发明制备方法制造出来的硒化铟靶材为单片产品，且一个包套可处理多片产品，去除包套后，只需进行平面磨及外圆加工即可，无需分割，可缩短机加时间，且可减少因靶材分割造成的原料损耗。所得硒化铟靶材致密度≥99%，电阻率≤1MΩ/cm。
Die filling method and preparation method of indium selenide target material
硒化铟靶材的装模方法、制备方法
OU HAILING (Autor:in) / MA GUOCHENG (Autor:in) / TONG PEIYUN (Autor:in) / XIE XIAOLIN (Autor:in) / SHEN WENXING (Autor:in)
07.03.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
B28B
Formgeben von Ton oder anderen keramischen Stoffzusammensetzungen, Schlacke oder von Mischungen, die zementartiges Material enthalten, z.B. Putzmörtel
,
SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG OR MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
/
C04B
Kalk
,
LIME
/
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
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