Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
ITO (indium tin oxide) planar target and sintering method and sintering device thereof
The invention belongs to the field of ITO target materials, and particularly discloses an ITO plane target and a sintering method and device thereof. According to the sintering method, the ITO planar target blank is sintered in the closed space suitable for the size of the ITO planar target blank, temperature and gas distribution in the space is more uniform, the density of the target material can be improved, and the warping degree of the target material can be reduced. Meanwhile, the sintering method is carried out in a closed structure, oxygen outflow is completely eradicated, oxygen does not need to be introduced after oxygen partial pressure meets the condition for inhibiting volatilization of the target material, oxygen waste in the sintering process is greatly reduced, and the oxygen consumption needed in the overall sintering process is extremely low.
本发明属于ITO靶材领域，具体公开一种ITO平面靶及其烧结方法和烧结装置。本发明的烧结方法中，将ITO平面靶靶坯在适合其尺寸大小的密闭空间内进行烧结，该空间内温度和气体分布更加均匀，可提升靶材的密度和降低靶材的翘曲度。同时本发明的烧结方法在密闭结构内进行，杜绝了氧气流出，使得氧分压满足抑制靶材挥发的条件后，不需要再通入氧气，大大降低了在烧结过程中的氧气浪费，总体烧结过程所需的耗氧量极低。
ITO (indium tin oxide) planar target and sintering method and sintering device thereof
The invention belongs to the field of ITO target materials, and particularly discloses an ITO plane target and a sintering method and device thereof. According to the sintering method, the ITO planar target blank is sintered in the closed space suitable for the size of the ITO planar target blank, temperature and gas distribution in the space is more uniform, the density of the target material can be improved, and the warping degree of the target material can be reduced. Meanwhile, the sintering method is carried out in a closed structure, oxygen outflow is completely eradicated, oxygen does not need to be introduced after oxygen partial pressure meets the condition for inhibiting volatilization of the target material, oxygen waste in the sintering process is greatly reduced, and the oxygen consumption needed in the overall sintering process is extremely low.
本发明属于ITO靶材领域，具体公开一种ITO平面靶及其烧结方法和烧结装置。本发明的烧结方法中，将ITO平面靶靶坯在适合其尺寸大小的密闭空间内进行烧结，该空间内温度和气体分布更加均匀，可提升靶材的密度和降低靶材的翘曲度。同时本发明的烧结方法在密闭结构内进行，杜绝了氧气流出，使得氧分压满足抑制靶材挥发的条件后，不需要再通入氧气，大大降低了在烧结过程中的氧气浪费，总体烧结过程所需的耗氧量极低。
ITO (indium tin oxide) planar target and sintering method and sintering device thereof
一种ITO平面靶及其烧结方法和烧结装置
LI SHUAI (Autor:in) / YIN LIN (Autor:in) / YU FANG (Autor:in) / LI YE (Autor:in) / LI MINGHONG (Autor:in) / ZENG GUANGPENG (Autor:in)
04.04.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
/
C04B
Kalk
,
LIME
/
F27D
Einzelheiten oder Zubehör für Industrieöfen, Schachtöfen, Brennöfen oder Retorten, soweit sie nicht auf eine Ofenart eingeschränkt sind
,
DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
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