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Indium zinc oxide sintering target and preparation method thereof
The invention belongs to the field of semiconductors, and discloses an indium zinc oxide sintering target which is prepared from zinc oxide, indium oxide and rare metal oxide as raw materials. The weight ratio of the zinc oxide to the indium oxide to the rare metal oxide is (6-13): (87-94): (0.001-0.2); and the D90 particle sizes of the zinc oxide, the indium oxide and the rare metal oxide are 200-300nm. The indium zinc oxide sintered target is modified through rare metal oxide, the particle size of raw materials is controlled, the resistivity and porosity of the target material can be effectively reduced, and meanwhile, the invention further discloses a preparation method of the sintered target.
本发明属于半导体领域,公开了一种氧化铟锌烧结靶,由氧化锌、氧化铟、稀有金属氧化物为原料制备得到;氧化锌、氧化铟、稀有金属氧化物的重量比为6~13:87~94:0.001~0.2;氧化锌、氧化铟、稀有金属氧化物的D90粒度均为200‑300nm。该氧化铟锌烧结靶通过稀有金属氧化物改性并控制原材料粒径,可以有效的降低靶材的电阻率和气孔率,同时,本发明还公开了该烧结靶的制备方法。
Indium zinc oxide sintering target and preparation method thereof
The invention belongs to the field of semiconductors, and discloses an indium zinc oxide sintering target which is prepared from zinc oxide, indium oxide and rare metal oxide as raw materials. The weight ratio of the zinc oxide to the indium oxide to the rare metal oxide is (6-13): (87-94): (0.001-0.2); and the D90 particle sizes of the zinc oxide, the indium oxide and the rare metal oxide are 200-300nm. The indium zinc oxide sintered target is modified through rare metal oxide, the particle size of raw materials is controlled, the resistivity and porosity of the target material can be effectively reduced, and meanwhile, the invention further discloses a preparation method of the sintered target.
本发明属于半导体领域,公开了一种氧化铟锌烧结靶,由氧化锌、氧化铟、稀有金属氧化物为原料制备得到;氧化锌、氧化铟、稀有金属氧化物的重量比为6~13:87~94:0.001~0.2;氧化锌、氧化铟、稀有金属氧化物的D90粒度均为200‑300nm。该氧化铟锌烧结靶通过稀有金属氧化物改性并控制原材料粒径,可以有效的降低靶材的电阻率和气孔率,同时,本发明还公开了该烧结靶的制备方法。
Indium zinc oxide sintering target and preparation method thereof
一种氧化铟锌烧结靶及其制备方法
LI KAIJIE (Autor:in) / SHAO XUELIANG (Autor:in) / WANG QIFENG (Autor:in) / TAN HONGLEI (Autor:in) / LUO SISHI (Autor:in)
30.05.2023
Patent
Elektronische Ressource
Chinesisch
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