Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Method for preparing low-density ITO (Indium Tin Oxide) target material for evaporation by sanding process
The invention discloses a method for preparing a low-density ITO (indium tin oxide) target material for evaporation by a sanding process. The method comprises the following steps: uniformly mixing indium oxide with the particle size D50 of 0.1-0.5 mu m and tin oxide powder; calcining the mixed powder; pulping the calcined powder, and adding the slurry and a binder into a sand mill for sanding; carrying out spray drying and granulation on the sanded slurry; carrying out cold press molding on the granulated powder to obtain a cold-pressed biscuit; degreasing the cold-pressed biscuit; and the degreased cold-pressed biscuit is placed in an oxygen atmosphere for normal-pressure sintering, and the low-density ITO target material for evaporation is obtained. The low-density ITO target material for evaporation, which is uniform in grain size and low in bulk resistivity, can be obtained, and the relative density of the low-density ITO target material is 55-65%; the prepared low-density ITO target material is not easy to crack during evaporation, the utilization rate of the target material is high, and a uniform conductive film with low resistivity and high light transmittance can be obtained after evaporation.
本发明公开了一种砂磨工艺制备蒸镀用低密度ITO靶材的方法，包括：将粒径D50为0.1～0.5um的氧化铟与氧化锡粉末混合均匀；对混合粉末进行煅烧；对煅烧后的粉末制浆，并将浆料、粘结剂加入砂磨机中进行砂磨；对砂磨后的浆料进行喷雾干燥，造粒；将造粒后的粉末进行冷压成型，得到冷压素坯；将冷压素坯进行脱脂；将脱脂后的冷压素坯置于氧气气氛下进行常压烧结，得到蒸镀用低密度ITO靶材。本发明可获得晶粒尺寸均匀、体电阻率低的蒸镀用低密度ITO靶材，其相对密度为55～65％；制得的低密度ITO靶材在蒸镀使用时不易开裂且靶材利用率高，并在蒸镀后可获得均匀的低电阻率、高透光率的导电薄膜。
Method for preparing low-density ITO (Indium Tin Oxide) target material for evaporation by sanding process
The invention discloses a method for preparing a low-density ITO (indium tin oxide) target material for evaporation by a sanding process. The method comprises the following steps: uniformly mixing indium oxide with the particle size D50 of 0.1-0.5 mu m and tin oxide powder; calcining the mixed powder; pulping the calcined powder, and adding the slurry and a binder into a sand mill for sanding; carrying out spray drying and granulation on the sanded slurry; carrying out cold press molding on the granulated powder to obtain a cold-pressed biscuit; degreasing the cold-pressed biscuit; and the degreased cold-pressed biscuit is placed in an oxygen atmosphere for normal-pressure sintering, and the low-density ITO target material for evaporation is obtained. The low-density ITO target material for evaporation, which is uniform in grain size and low in bulk resistivity, can be obtained, and the relative density of the low-density ITO target material is 55-65%; the prepared low-density ITO target material is not easy to crack during evaporation, the utilization rate of the target material is high, and a uniform conductive film with low resistivity and high light transmittance can be obtained after evaporation.
本发明公开了一种砂磨工艺制备蒸镀用低密度ITO靶材的方法，包括：将粒径D50为0.1～0.5um的氧化铟与氧化锡粉末混合均匀；对混合粉末进行煅烧；对煅烧后的粉末制浆，并将浆料、粘结剂加入砂磨机中进行砂磨；对砂磨后的浆料进行喷雾干燥，造粒；将造粒后的粉末进行冷压成型，得到冷压素坯；将冷压素坯进行脱脂；将脱脂后的冷压素坯置于氧气气氛下进行常压烧结，得到蒸镀用低密度ITO靶材。本发明可获得晶粒尺寸均匀、体电阻率低的蒸镀用低密度ITO靶材，其相对密度为55～65％；制得的低密度ITO靶材在蒸镀使用时不易开裂且靶材利用率高，并在蒸镀后可获得均匀的低电阻率、高透光率的导电薄膜。
Method for preparing low-density ITO (Indium Tin Oxide) target material for evaporation by sanding process
一种砂磨工艺制备蒸镀用低密度ITO靶材的方法
YANG JIE (Autor:in) / ZUO NINGWEI (Autor:in) / YANG LONG (Autor:in)
14.04.2023
Patent
Elektronische Ressource
Chinesisch
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