Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Low-density ITO (indium tin oxide) target material for evaporation prepared by sanding process and preparation method of low-density ITO target material
The invention provides a low-density ITO target material for evaporation prepared through a sanding process and a method of the low-density ITO target material, and belongs to the technical field of target material manufacturing, and the method comprises the steps that S1, indium oxide powder and tin oxide powder with D50 being 0.1-0.5 mu m are evenly mixed and then sequentially subjected to calcination, sanding, spray granulation and cold press forming, and a cold press biscuit is obtained; and S2, degreasing the cold-pressed biscuit, and then, carrying out normal-pressure sintering in a furnace in an oxygen atmosphere, so as to obtain the low-density ITO target material. The prepared low-density ITO target material is high in purity, low in relative density and high in conductivity, and an ITO film obtained through evaporation of the low-density ITO target material has high conductivity and light transmittance.
本发明给出了一种砂磨工艺制备蒸镀用低密度ITO靶材及其方法，属于靶材制造技术领域，该方法包括：步骤S1、将D50均为0.1～0.5um的氧化铟粉末和氧化锡粉末混合均匀后依次进行煅烧、砂磨、喷雾造粒和冷压成型，得到冷压素坯；步骤S2、将所述冷压素坯脱脂后置于炉内氧气气氛下进行常压烧结，得到低密度ITO靶材。本发明制备的低密度ITO靶材纯度高，相对密度低，具有较高的导电性，用其蒸镀获得的ITO薄膜具有较高的导电性和透光率。
Low-density ITO (indium tin oxide) target material for evaporation prepared by sanding process and preparation method of low-density ITO target material
The invention provides a low-density ITO target material for evaporation prepared through a sanding process and a method of the low-density ITO target material, and belongs to the technical field of target material manufacturing, and the method comprises the steps that S1, indium oxide powder and tin oxide powder with D50 being 0.1-0.5 mu m are evenly mixed and then sequentially subjected to calcination, sanding, spray granulation and cold press forming, and a cold press biscuit is obtained; and S2, degreasing the cold-pressed biscuit, and then, carrying out normal-pressure sintering in a furnace in an oxygen atmosphere, so as to obtain the low-density ITO target material. The prepared low-density ITO target material is high in purity, low in relative density and high in conductivity, and an ITO film obtained through evaporation of the low-density ITO target material has high conductivity and light transmittance.
本发明给出了一种砂磨工艺制备蒸镀用低密度ITO靶材及其方法，属于靶材制造技术领域，该方法包括：步骤S1、将D50均为0.1～0.5um的氧化铟粉末和氧化锡粉末混合均匀后依次进行煅烧、砂磨、喷雾造粒和冷压成型，得到冷压素坯；步骤S2、将所述冷压素坯脱脂后置于炉内氧气气氛下进行常压烧结，得到低密度ITO靶材。本发明制备的低密度ITO靶材纯度高，相对密度低，具有较高的导电性，用其蒸镀获得的ITO薄膜具有较高的导电性和透光率。
Low-density ITO (indium tin oxide) target material for evaporation prepared by sanding process and preparation method of low-density ITO target material
一种砂磨工艺制备蒸镀用低密度ITO靶材及其方法
MENG JIANG (Autor:in) / HU QIANGNAN (Autor:in) / LUO WEN (Autor:in) / ZHANG SHUAI (Autor:in) / ZHENG WEIXING (Autor:in) / ZHANG ZIFU (Autor:in) / ZUO NINGWEI (Autor:in) / HAN JIANHUA (Autor:in) / SUN LEI (Autor:in) / MA XIAO (Autor:in)
20.10.2023
Patent
Elektronische Ressource
Chinesisch
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