Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of IGZO target material
The invention relates to the technical field of target materials, in particular to a preparation method of an IGZO target material, and the method realizes preparation of the IGZO target material with high compactness and low warping degree through fine regulation and control of material ratio, ball milling and sanding processes, proper pressure application and optimization of the preparation process. The preparation method comprises the following specific steps: mixing indium oxide powder, gallium oxide powder, zinc oxide powder and deionized water, performing ball milling, adding a dispersing agent, a defoaming agent and deionized water, performing sanding, and then performing powder granulation and sintering. Optimized process parameters comprise the purity and specific surface area of the material, the time and conditions of ball milling and sanding, the granularity of sanding slurry, moderate pressure application, sintering temperature and heating rate. The IGZO target material obtained by the method has high compactness and low warping degree, and is suitable for various application fields, such as a display and a thin film transistor.
本发明涉及靶材技术领域，具体涉及一种IGZO靶材的制备方法，该方法通过精细调控材料配比、球磨和砂磨工艺、适当的压力施加以及制备过程的优化，实现了高致密性和低曲翘度的IGZO靶材的制备。具体步骤包括将氧化铟粉末、氧化镓粉末、氧化锌粉末和去离子水混合球磨，加入分散剂、消泡剂和去离子水进行砂磨，然后进行粉末造粒和烧结。优化的工艺参数包括材料的纯度和比表面积、球磨和砂磨的时间和条件、砂磨浆料的粒度、适度的压力施加和烧结温度及升温速率。该方法获得的IGZO靶材具有高的致密性和低的曲翘度，适用于各种应用领域，如显示器和薄膜晶体管等。
Preparation method of IGZO target material
The invention relates to the technical field of target materials, in particular to a preparation method of an IGZO target material, and the method realizes preparation of the IGZO target material with high compactness and low warping degree through fine regulation and control of material ratio, ball milling and sanding processes, proper pressure application and optimization of the preparation process. The preparation method comprises the following specific steps: mixing indium oxide powder, gallium oxide powder, zinc oxide powder and deionized water, performing ball milling, adding a dispersing agent, a defoaming agent and deionized water, performing sanding, and then performing powder granulation and sintering. Optimized process parameters comprise the purity and specific surface area of the material, the time and conditions of ball milling and sanding, the granularity of sanding slurry, moderate pressure application, sintering temperature and heating rate. The IGZO target material obtained by the method has high compactness and low warping degree, and is suitable for various application fields, such as a display and a thin film transistor.
本发明涉及靶材技术领域，具体涉及一种IGZO靶材的制备方法，该方法通过精细调控材料配比、球磨和砂磨工艺、适当的压力施加以及制备过程的优化，实现了高致密性和低曲翘度的IGZO靶材的制备。具体步骤包括将氧化铟粉末、氧化镓粉末、氧化锌粉末和去离子水混合球磨，加入分散剂、消泡剂和去离子水进行砂磨，然后进行粉末造粒和烧结。优化的工艺参数包括材料的纯度和比表面积、球磨和砂磨的时间和条件、砂磨浆料的粒度、适度的压力施加和烧结温度及升温速率。该方法获得的IGZO靶材具有高的致密性和低的曲翘度，适用于各种应用领域，如显示器和薄膜晶体管等。
Preparation method of IGZO target material
一种IGZO靶材的制备方法
WANG ZHIQIANG (Autor:in) / ZENG DUNFENG (Autor:in) / CHEN GUANGYUAN (Autor:in) / ZENG TAN (Autor:in)
24.11.2023
Patent
Elektronische Ressource
Chinesisch
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