Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of IGZO target material
The invention relates to the technical field of ceramic target materials, in particular to a preparation method of an IGZO target material, which comprises the following steps: step 1, a first batch of nano powder slurry and a second batch of nano powder slurry formed by mixing In2O3 powder, ZnO powder and Ga2O3 powder are respectively prepared, the solid content of the first batch of nano powder slurry is 55-67 wt%, and the solid content of the second batch of nano powder slurry is 46-55 wt%; step 2, drying and granulating the first batch of slurry and the second batch of slurry to prepare a first batch of particles and a second batch of particles with different average particle sizes; step 3, mixing the first batch of particles with the second batch of particles, and preparing a target material biscuit by adopting mould pressing-cold isostatic pressing; and 4, preparing the IGZO target material from the target material biscuit obtained in the step 3 by adopting a sintering process. According to the preparation method, gaps among particles are reduced, the apparent density is improved, and then the density of a biscuit after static pressing and the density of a sintered target material are improved.
本发明涉及陶瓷靶材技术领域，具体涉及一种IGZO靶材的制备方法，包括以下步骤：步骤1，分别制备由In2O3粉体、ZnO粉体、Ga2O3粉体混合形成的第一批次纳米粉体浆料和第二批次纳米粉体浆料，所述第一、二批次纳米粉体浆料固含量分别为55‑67wt％、46‑55wt％；步骤2，将第一批次浆料和第二批次浆料干燥造粒，制备平均粒径不同的第一批次颗粒和第二批次颗粒；步骤3，将所述第一批次颗粒与所述第二批次颗粒混合后采用模压‑冷等静压制备得到靶材素坯；步骤4，将步骤3所得靶材素坯采用烧结工艺制备得到IGZO靶材。该制备方法通过减少颗粒之间的间隙，提升松装密度，进而提升静压后的素坯密度及烧结后的靶材致密度。
Preparation method of IGZO target material
The invention relates to the technical field of ceramic target materials, in particular to a preparation method of an IGZO target material, which comprises the following steps: step 1, a first batch of nano powder slurry and a second batch of nano powder slurry formed by mixing In2O3 powder, ZnO powder and Ga2O3 powder are respectively prepared, the solid content of the first batch of nano powder slurry is 55-67 wt%, and the solid content of the second batch of nano powder slurry is 46-55 wt%; step 2, drying and granulating the first batch of slurry and the second batch of slurry to prepare a first batch of particles and a second batch of particles with different average particle sizes; step 3, mixing the first batch of particles with the second batch of particles, and preparing a target material biscuit by adopting mould pressing-cold isostatic pressing; and 4, preparing the IGZO target material from the target material biscuit obtained in the step 3 by adopting a sintering process. According to the preparation method, gaps among particles are reduced, the apparent density is improved, and then the density of a biscuit after static pressing and the density of a sintered target material are improved.
本发明涉及陶瓷靶材技术领域，具体涉及一种IGZO靶材的制备方法，包括以下步骤：步骤1，分别制备由In2O3粉体、ZnO粉体、Ga2O3粉体混合形成的第一批次纳米粉体浆料和第二批次纳米粉体浆料，所述第一、二批次纳米粉体浆料固含量分别为55‑67wt％、46‑55wt％；步骤2，将第一批次浆料和第二批次浆料干燥造粒，制备平均粒径不同的第一批次颗粒和第二批次颗粒；步骤3，将所述第一批次颗粒与所述第二批次颗粒混合后采用模压‑冷等静压制备得到靶材素坯；步骤4，将步骤3所得靶材素坯采用烧结工艺制备得到IGZO靶材。该制备方法通过减少颗粒之间的间隙，提升松装密度，进而提升静压后的素坯密度及烧结后的靶材致密度。
Preparation method of IGZO target material
一种IGZO靶材的制备方法
LI XINRAN (Autor:in) / WANG DONGXU (Autor:in) / WANG YONGCHAO (Autor:in) / WANG WEITAO (Autor:in) / ZHAO ZELIANG (Autor:in)
12.11.2024
Patent
Elektronische Ressource
Chinesisch
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