Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Low-resistance and high-mobility indium oxide doped target material and preparation method thereof
The invention relates to the technical field of target material production, and discloses an indium oxide doped target material with low resistance and high mobility, and metal elements in the target material comprise indium, titanium, holmium and cerium; the molar ratio of the indium to the titanium to the holmium to the cerium is (92.4 to 95.2) to (3 to 4) to (0.7 to 0.9) to (1.5 to 1.8); the target material is prepared from a target material precursor containing indium oxide powder, titanium oxide powder, holmium oxide powder and cerium oxide powder through degreasing operation and oxygen-enriched sintering operation. The technological parameters of the degreasing operation are as follows: the degreasing temperature is 500-600 DEG C, and the oxygen pressure is 0.02-0.05 MPa; the technological parameters of the oxygen-enriched sintering operation are as follows: the sintering temperature is 1300 to 1550 DEG C, and the oxygen pressure is 0.09 to 0.12 MPa.
本申请涉及靶材生产技术领域，公开了一种低电阻、高迁移率的氧化铟掺杂靶材，所述靶材中的金属元素由铟、钛、钬、铈组成；所述铟、钛、钬、铈的摩尔比为92.4～95.2:3～4:0.7～0.9:1.5～1.8；所述靶材通过含氧化铟粉末、氧化钛粉末、氧化钬粉末、氧化铈粉末的靶材前驱体经过脱脂操作和富氧烧结操作制备得到；所述脱脂操作的工艺参数为：脱脂温度为500～600℃，氧气压力为0.02～0.05MPa；所述富氧烧结操作的工艺参数为：烧结温度为1300～1550℃，氧气压力为0.09～0.12MPa。
Low-resistance and high-mobility indium oxide doped target material and preparation method thereof
The invention relates to the technical field of target material production, and discloses an indium oxide doped target material with low resistance and high mobility, and metal elements in the target material comprise indium, titanium, holmium and cerium; the molar ratio of the indium to the titanium to the holmium to the cerium is (92.4 to 95.2) to (3 to 4) to (0.7 to 0.9) to (1.5 to 1.8); the target material is prepared from a target material precursor containing indium oxide powder, titanium oxide powder, holmium oxide powder and cerium oxide powder through degreasing operation and oxygen-enriched sintering operation. The technological parameters of the degreasing operation are as follows: the degreasing temperature is 500-600 DEG C, and the oxygen pressure is 0.02-0.05 MPa; the technological parameters of the oxygen-enriched sintering operation are as follows: the sintering temperature is 1300 to 1550 DEG C, and the oxygen pressure is 0.09 to 0.12 MPa.
本申请涉及靶材生产技术领域，公开了一种低电阻、高迁移率的氧化铟掺杂靶材，所述靶材中的金属元素由铟、钛、钬、铈组成；所述铟、钛、钬、铈的摩尔比为92.4～95.2:3～4:0.7～0.9:1.5～1.8；所述靶材通过含氧化铟粉末、氧化钛粉末、氧化钬粉末、氧化铈粉末的靶材前驱体经过脱脂操作和富氧烧结操作制备得到；所述脱脂操作的工艺参数为：脱脂温度为500～600℃，氧气压力为0.02～0.05MPa；所述富氧烧结操作的工艺参数为：烧结温度为1300～1550℃，氧气压力为0.09～0.12MPa。
Low-resistance and high-mobility indium oxide doped target material and preparation method thereof
一种低电阻、高迁移率的氧化铟掺杂靶材及其制备方法
ZHANG XINGYU (Autor:in) / SHAO XUELIANG (Autor:in) / LI KAIJIE (Autor:in) / GU DESHENG (Autor:in) / LUO SISHI (Autor:in)
12.12.2023
Patent
Elektronische Ressource
Chinesisch
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