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High-density target material and preparation method thereof
The invention belongs to the technical field of semiconductors, and discloses a preparation method of a high-density target material, which comprises the following steps: in a vacuum environment, placing a target material precursor and titanium powder in the same environment without mutual contact, and heating and sintering to obtain the target material, the target material precursor is suspended during sintering; the relative density of the target material is greater than 99%, and the absolute density is equal to or greater than 7.1 g/cm < 3 >. The method is suitable for the high-density target material with the relative density of 99%, the oxygen vacancy can be effectively improved, and meanwhile the target material is prevented from warping.
本发明属于半导体技术领域，公开了一种高密度靶材的制备方法，在真空环境下，将靶材前驱体、钛粉置于同一环境中且相互不接触，升温烧结得到靶材；所述靶材前驱体在烧结时悬空布置；所述靶材的相对密度大于99％，绝对密度等于或大于7.1g/cm3。本发明的方法适用于相对密度为99％的高密度靶材，可有效提高氧空位，同时防止靶材翘曲。
High-density target material and preparation method thereof
The invention belongs to the technical field of semiconductors, and discloses a preparation method of a high-density target material, which comprises the following steps: in a vacuum environment, placing a target material precursor and titanium powder in the same environment without mutual contact, and heating and sintering to obtain the target material, the target material precursor is suspended during sintering; the relative density of the target material is greater than 99%, and the absolute density is equal to or greater than 7.1 g/cm < 3 >. The method is suitable for the high-density target material with the relative density of 99%, the oxygen vacancy can be effectively improved, and meanwhile the target material is prevented from warping.
本发明属于半导体技术领域，公开了一种高密度靶材的制备方法，在真空环境下，将靶材前驱体、钛粉置于同一环境中且相互不接触，升温烧结得到靶材；所述靶材前驱体在烧结时悬空布置；所述靶材的相对密度大于99％，绝对密度等于或大于7.1g/cm3。本发明的方法适用于相对密度为99％的高密度靶材，可有效提高氧空位，同时防止靶材翘曲。
High-density target material and preparation method thereof
一种高密度靶材及其制备方法
LUO SISHI (Autor:in) / LI KAIJIE (Autor:in) / SHAO XUELIANG (Autor:in) / GU DESHENG (Autor:in) / ZHANG XINGYU (Autor:in)
12.12.2023
Patent
Elektronische Ressource
Chinesisch
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