Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High-density oxide target material and preparation method thereof
The invention belongs to the technical field of new materials, and discloses a preparation method of a high-density oxide target material, which comprises the following steps: mixing first oxide precursor powder and second oxide precursor powder, carrying out compression molding, and sintering to obtain the target material, the first oxide precursor powder and the second oxide precursor powder both contain not less than 97 wt% of indium oxide; the weight of the first oxide precursor powder is equivalent to 80-90% of the total weight of the first oxide precursor powder and the second oxide precursor powder; the particle size of the first oxide precursor powder is 20-30 [mu] m; and the particle size of the second oxide precursor powder is 45-73 [mu] m. According to the method, a small amount of large-particle-size precursor powder and a large amount of small-particle-size precursor powder are adopted for the target material with the high indium oxide content, the relative density of the target material of the type can be effectively improved, the electrical resistivity can be effectively reduced, and the forming effect can be effectively improved. Meanwhile, the invention also provides the high-density oxide target material.
本发明属于新材料技术领域，公开了一种高密度氧化物靶材的制备方法，将第一氧化物前驱体粉末、第二氧化物前驱体粉末混合后模压成型并烧结，得到靶材；所述第一氧化物前驱体粉末、第二氧化物前驱体粉末中均含有不低于97wt％的氧化铟；所述第一氧化物前驱体粉末的重量相当于第一氧化物前驱体粉末、第二氧化物前驱体粉末的总重量的80％～90％；所述第一氧化物前驱体粉末的粒径为20～30μm；所述第二氧化物前驱体粉末的粒径为45～73μm。本发明的方法针对高氧化铟含量的靶材，采用了少量大粒径前驱体粉末和大量的小粒径前驱体粉末，可以有效的改善该类型的靶材的相对密度、降低电阻率、提高成型效果。同时，本发明还提供了该高密度氧化物靶材。
High-density oxide target material and preparation method thereof
The invention belongs to the technical field of new materials, and discloses a preparation method of a high-density oxide target material, which comprises the following steps: mixing first oxide precursor powder and second oxide precursor powder, carrying out compression molding, and sintering to obtain the target material, the first oxide precursor powder and the second oxide precursor powder both contain not less than 97 wt% of indium oxide; the weight of the first oxide precursor powder is equivalent to 80-90% of the total weight of the first oxide precursor powder and the second oxide precursor powder; the particle size of the first oxide precursor powder is 20-30 [mu] m; and the particle size of the second oxide precursor powder is 45-73 [mu] m. According to the method, a small amount of large-particle-size precursor powder and a large amount of small-particle-size precursor powder are adopted for the target material with the high indium oxide content, the relative density of the target material of the type can be effectively improved, the electrical resistivity can be effectively reduced, and the forming effect can be effectively improved. Meanwhile, the invention also provides the high-density oxide target material.
本发明属于新材料技术领域，公开了一种高密度氧化物靶材的制备方法，将第一氧化物前驱体粉末、第二氧化物前驱体粉末混合后模压成型并烧结，得到靶材；所述第一氧化物前驱体粉末、第二氧化物前驱体粉末中均含有不低于97wt％的氧化铟；所述第一氧化物前驱体粉末的重量相当于第一氧化物前驱体粉末、第二氧化物前驱体粉末的总重量的80％～90％；所述第一氧化物前驱体粉末的粒径为20～30μm；所述第二氧化物前驱体粉末的粒径为45～73μm。本发明的方法针对高氧化铟含量的靶材，采用了少量大粒径前驱体粉末和大量的小粒径前驱体粉末，可以有效的改善该类型的靶材的相对密度、降低电阻率、提高成型效果。同时，本发明还提供了该高密度氧化物靶材。
High-density oxide target material and preparation method thereof
一种高密度氧化物靶材及其制备方法
ZHANG GAOXIANG (Autor:in) / WANG QIFENG (Autor:in) / LI KAIJIE (Autor:in) / WU HONGYI (Autor:in) / LU ZHOU (Autor:in) / LIU CHENGLONG (Autor:in)
12.11.2024
Patent
Elektronische Ressource
Chinesisch
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