Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Method for preparing IGZO target material through three-step segmented sintering process
The invention discloses a method for preparing an IGZO (Indium Gallium Zinc Oxide) target material by a three-step segmented sintering process, which comprises the following steps of: putting an IGZO green body into a sintering furnace, heating from room temperature to a first sintering temperature of 500-700 DEG C at a speed I under negative pressure and air atmosphere, preserving heat for 2-6 hours, and degreasing; the temperature in the furnace is increased to 700-800 DEG C at the speed I, then oxygen is injected, and the air pressure in the furnace is controlled; in the oxygen atmosphere, the temperature in the furnace is increased to the second sintering temperature 1350-1550 DEG C at the speed II, and heat preservation is conducted for 1-4 h; the temperature in the furnace is reduced to a third sintering temperature of 1300-1380 DEG C at a rate III, heat preservation is conducted for 4-6 h, argon is introduced into the middle point of the heat preservation time, the oxygen volume concentration in the furnace is adjusted by adjusting the oxygen flow, and the flow ratio of oxygen to argon is controlled to be (0.2-0.8): 1; reducing the temperature in the furnace to 800-1000 DEG C at a speed IV, then cooling along with the furnace, stopping introducing oxygen, stopping introducing argon when the temperature is reduced to 650-950 DEG C, and finally discharging at room temperature to obtain the IGZO target material. The method is easy and convenient to operate, the process is simple and controllable, large-scale industrial production can be achieved, the relative density of the obtained IGZO target material can reach 99.70%, and the resistivity is not higher than 1.49 m omega.cm.
本发明公开一种三步分段烧结工艺制备IGZO靶材的方法，按以下步骤进行：将IGZO生坯放入烧结炉中，在负压以及空气气氛下，由室温以速率Ⅰ升至第一烧结温度500～700℃，保温2～6h进行脱脂；将炉内的温度再以速率Ⅰ升至700～800℃后开始充入氧气，控制炉内的气压；在氧气气氛下，将炉内的温度以速率Ⅱ升至第二烧结温度1350～1550℃，保温1～4h；将炉内的温度以速率Ⅲ降至第三烧结温度1300～1380℃，保温4～6h，在此段保温时间的中点通入氩气、调整氧气流量来调节炉内氧体积浓度，氧气和氩气流量比控制在（0.2～0.8）:1；将炉内的温度以速率Ⅳ降至800～1000℃后随炉冷却，停止通入氧气，当温度降至650～950℃停止通入氩气，最后室温出炉，得到IGZO靶材。本发明操作简便，工艺简单可控，可实现大规模工业生产，获得的IGZO靶材相对密度可达99.70%，电阻率不高于1.49mΩ·cm。
Method for preparing IGZO target material through three-step segmented sintering process
The invention discloses a method for preparing an IGZO (Indium Gallium Zinc Oxide) target material by a three-step segmented sintering process, which comprises the following steps of: putting an IGZO green body into a sintering furnace, heating from room temperature to a first sintering temperature of 500-700 DEG C at a speed I under negative pressure and air atmosphere, preserving heat for 2-6 hours, and degreasing; the temperature in the furnace is increased to 700-800 DEG C at the speed I, then oxygen is injected, and the air pressure in the furnace is controlled; in the oxygen atmosphere, the temperature in the furnace is increased to the second sintering temperature 1350-1550 DEG C at the speed II, and heat preservation is conducted for 1-4 h; the temperature in the furnace is reduced to a third sintering temperature of 1300-1380 DEG C at a rate III, heat preservation is conducted for 4-6 h, argon is introduced into the middle point of the heat preservation time, the oxygen volume concentration in the furnace is adjusted by adjusting the oxygen flow, and the flow ratio of oxygen to argon is controlled to be (0.2-0.8): 1; reducing the temperature in the furnace to 800-1000 DEG C at a speed IV, then cooling along with the furnace, stopping introducing oxygen, stopping introducing argon when the temperature is reduced to 650-950 DEG C, and finally discharging at room temperature to obtain the IGZO target material. The method is easy and convenient to operate, the process is simple and controllable, large-scale industrial production can be achieved, the relative density of the obtained IGZO target material can reach 99.70%, and the resistivity is not higher than 1.49 m omega.cm.
本发明公开一种三步分段烧结工艺制备IGZO靶材的方法，按以下步骤进行：将IGZO生坯放入烧结炉中，在负压以及空气气氛下，由室温以速率Ⅰ升至第一烧结温度500～700℃，保温2～6h进行脱脂；将炉内的温度再以速率Ⅰ升至700～800℃后开始充入氧气，控制炉内的气压；在氧气气氛下，将炉内的温度以速率Ⅱ升至第二烧结温度1350～1550℃，保温1～4h；将炉内的温度以速率Ⅲ降至第三烧结温度1300～1380℃，保温4～6h，在此段保温时间的中点通入氩气、调整氧气流量来调节炉内氧体积浓度，氧气和氩气流量比控制在（0.2～0.8）:1；将炉内的温度以速率Ⅳ降至800～1000℃后随炉冷却，停止通入氧气，当温度降至650～950℃停止通入氩气，最后室温出炉，得到IGZO靶材。本发明操作简便，工艺简单可控，可实现大规模工业生产，获得的IGZO靶材相对密度可达99.70%，电阻率不高于1.49mΩ·cm。
Method for preparing IGZO target material through three-step segmented sintering process
一种三步分段烧结工艺制备IGZO靶材的方法
FAN FAN (Autor:in) / WANG LILI (Autor:in) / XU CANHUI (Autor:in) / NONG YONGPING (Autor:in) / ZHAO MINGYONG (Autor:in)
26.01.2024
Patent
Elektronische Ressource
Chinesisch
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