Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
IGTO sputtering target material and preparation method and application thereof
The invention discloses an IGTO sputtering target material as well as a preparation method and application thereof. The IGTO target material comprises the following components in percentage by mass: 40%-80% of In2O3, 10%-30% of SnO2, 10%-30% of Ga2O3, 0.01%-2% of GaN and 0.1%-3% of TiO2, and the sum of the components is 100%. According to the IGTO sputtering target material disclosed by the invention, Ti and N elements are adopted for doping, and for a sputtered film, a relatively good inhibition effect on oxygen vacancies is achieved, and the carrier concentration is effectively reduced. And particularly, under the cooperation of Ti and N elements with specific contents, the influence on the mobility is not obvious. Ti is used for replacing Ga, so that the raw material cost of the target material can be reduced, and the sputtering target material can be applied to a thin film transistor in the display field.
本发明公开了一种IGTO溅射靶材及其制备方法和应用，本发明的IGTO靶材包括如下质量百分比的组分：In2O3的含量为40％～80％，SnO2的含量为10％～30％，Ga2O3的含量为10％～30％，GaN的含量为0.01％～2％，TiO2的含量为0.1％～3％，其各组分之和为100％。本发明的IGTO溅射靶材采用Ti和N元素进行掺杂，对溅射后薄膜而言，对氧空位有较好的抑制作用和有效降低载流子浓度。尤其在特定含量Ti和N元素的配合下，对迁移率的影响不明显。使用Ti取代Ga可降低靶材原料成本，且本发明的溅射靶材可应用于显示领域薄膜晶体管中。
IGTO sputtering target material and preparation method and application thereof
The invention discloses an IGTO sputtering target material as well as a preparation method and application thereof. The IGTO target material comprises the following components in percentage by mass: 40%-80% of In2O3, 10%-30% of SnO2, 10%-30% of Ga2O3, 0.01%-2% of GaN and 0.1%-3% of TiO2, and the sum of the components is 100%. According to the IGTO sputtering target material disclosed by the invention, Ti and N elements are adopted for doping, and for a sputtered film, a relatively good inhibition effect on oxygen vacancies is achieved, and the carrier concentration is effectively reduced. And particularly, under the cooperation of Ti and N elements with specific contents, the influence on the mobility is not obvious. Ti is used for replacing Ga, so that the raw material cost of the target material can be reduced, and the sputtering target material can be applied to a thin film transistor in the display field.
本发明公开了一种IGTO溅射靶材及其制备方法和应用，本发明的IGTO靶材包括如下质量百分比的组分：In2O3的含量为40％～80％，SnO2的含量为10％～30％，Ga2O3的含量为10％～30％，GaN的含量为0.01％～2％，TiO2的含量为0.1％～3％，其各组分之和为100％。本发明的IGTO溅射靶材采用Ti和N元素进行掺杂，对溅射后薄膜而言，对氧空位有较好的抑制作用和有效降低载流子浓度。尤其在特定含量Ti和N元素的配合下，对迁移率的影响不明显。使用Ti取代Ga可降低靶材原料成本，且本发明的溅射靶材可应用于显示领域薄膜晶体管中。
IGTO sputtering target material and preparation method and application thereof
一种IGTO溅射靶材及其制备方法和应用
YUAN RUN (Autor:in) / LI QIANG (Autor:in) / GE CHUNQIAO (Autor:in) / LIANG QIYING (Autor:in) / ZHONG WEIPING (Autor:in)
10.05.2024
Patent
Elektronische Ressource
Chinesisch
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