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Preparation method of high-purity silicon nitride powder
The invention is applicable to the technical field of preparation of inorganic non-metallic materials, and provides a preparation method of high-purity silicon nitride powder, which comprises the following steps: step 1, adding hexadecyl trimethyl ammonium bromide and deionized water into a solution, and stirring; 2, adding liquid ammonia, and stirring; 3, adding silicon tetrachloride, and carrying out chemical reaction at a preset temperature to obtain a silicon nitride precursor; 4, washing after the reaction; 5, pouring hexadecyl trimethyl ammonium bromide into deionized water, then adding the silicon nitride precursor, heating to a preset temperature, and stirring; step 6, filtering; 7, roasting the silicon nitride precursor under the protection atmosphere of mixed gas of ammonia gas and nitrogen gas to obtain silicon nitride nano powder; step 8, roasting in a nitrogen atmosphere; according to the preparation method disclosed by the invention, agglomeration of subsequent reactants in the solution is prevented through hexadecyl trimethyl ammonium bromide, and the stability and uniformity of particles are kept.
本发明适用于无机非金属材料制备技术领域，提供了一种高纯氮化硅粉体的制备方法，包括以下步骤：步骤一：在溶液中加入十六烷基三甲基溴化铵和去离子水，并搅拌；步骤二：加入液氨，并搅拌；步骤三：加入四氯化硅并在预定温度下进行化学反应得到氮化硅前驱体；步骤四：反应后洗涤；步骤五：将十六烷基三甲基溴化铵倒入去离子水中，然后加入氮化硅前驱体，升温至预定温度并搅拌；步骤六：过滤；步骤七：氮化硅前驱体在氨气和氮气的混合气体保护氛围下焙烧，得到氮化硅纳米粉末；步骤八：在氮气氛围下焙烧；步骤九：将氮化硅粉末放入粉磨机粉磨，本发明通过十六烷基三甲基溴化铵防止后续反应物在溶液中的团聚，保持颗粒的稳定性和均匀性。
Preparation method of high-purity silicon nitride powder
The invention is applicable to the technical field of preparation of inorganic non-metallic materials, and provides a preparation method of high-purity silicon nitride powder, which comprises the following steps: step 1, adding hexadecyl trimethyl ammonium bromide and deionized water into a solution, and stirring; 2, adding liquid ammonia, and stirring; 3, adding silicon tetrachloride, and carrying out chemical reaction at a preset temperature to obtain a silicon nitride precursor; 4, washing after the reaction; 5, pouring hexadecyl trimethyl ammonium bromide into deionized water, then adding the silicon nitride precursor, heating to a preset temperature, and stirring; step 6, filtering; 7, roasting the silicon nitride precursor under the protection atmosphere of mixed gas of ammonia gas and nitrogen gas to obtain silicon nitride nano powder; step 8, roasting in a nitrogen atmosphere; according to the preparation method disclosed by the invention, agglomeration of subsequent reactants in the solution is prevented through hexadecyl trimethyl ammonium bromide, and the stability and uniformity of particles are kept.
本发明适用于无机非金属材料制备技术领域，提供了一种高纯氮化硅粉体的制备方法，包括以下步骤：步骤一：在溶液中加入十六烷基三甲基溴化铵和去离子水，并搅拌；步骤二：加入液氨，并搅拌；步骤三：加入四氯化硅并在预定温度下进行化学反应得到氮化硅前驱体；步骤四：反应后洗涤；步骤五：将十六烷基三甲基溴化铵倒入去离子水中，然后加入氮化硅前驱体，升温至预定温度并搅拌；步骤六：过滤；步骤七：氮化硅前驱体在氨气和氮气的混合气体保护氛围下焙烧，得到氮化硅纳米粉末；步骤八：在氮气氛围下焙烧；步骤九：将氮化硅粉末放入粉磨机粉磨，本发明通过十六烷基三甲基溴化铵防止后续反应物在溶液中的团聚，保持颗粒的稳定性和均匀性。
Preparation method of high-purity silicon nitride powder
一种高纯氮化硅粉体的制备方法
YIN XINGLEI (Autor:in) / YIN CHANGZHI (Autor:in) / LI CHAO (Autor:in)
14.05.2024
Patent
Elektronische Ressource
Chinesisch
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