Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High-purity silicon nitride powder and preparation method thereof
The invention relates to the field of preparation of chemical materials, and particularly discloses high-purity silicon nitride powder and a preparation method thereof. The preparation method of the high-purity silicon nitride powder comprises the following steps: mixing 30-40 parts of silicon dioxide nanoparticles and 12-40 parts of carbon black, adding deionized water to obtain a blend, stirring the blend, and drying at 60-65 DEG C to obtain a silicon-carbon precursor; introducing nitrogen into the carbon-silicon precursor, heating to 1350-1500 DEG C, preserving heat to obtain a crude product, continuously introducing ammonia gas into the crude product, and preserving heat at 1300-1400 DEG C to obtain a primary purification product; and cooling the primary purification product to 600-650 DEG C, introducing oxygen, carrying out heat preservation to obtain a secondary purification product, and cooling the secondary purification product to obtain the product. By means of the preparation method of the high-purity silicon nitride powder, the high-purity silicon nitride powder with the purity being 99.65% or above can be prepared.
本申请涉及化工材料制备领域，具体公开了一种高纯度氮化硅粉体及其制备方法。一种高纯度氮化硅粉体的制备方法为：将30‑40份二氧化硅纳米颗粒与12‑40份炭黑混合，加入去离子水得到共混物，将共混物搅拌，在60‑65℃干燥，得到硅碳前驱体；向碳硅前驱体中通入氮气，加热至1350‑1500℃，保温，得到粗产物，继续后向粗产物中通入氨气，在1300‑1400℃下保温，得到一次提纯产物；将一次提纯产物降温至600‑650℃，通入氧气，保温，得到二次提纯产物，将二次提纯产物冷却，即得产物。本申请的一种高纯的氮化硅粉体的制备方法，能够制备出纯度为99.65%以上的高纯氮化硅粉体。
High-purity silicon nitride powder and preparation method thereof
The invention relates to the field of preparation of chemical materials, and particularly discloses high-purity silicon nitride powder and a preparation method thereof. The preparation method of the high-purity silicon nitride powder comprises the following steps: mixing 30-40 parts of silicon dioxide nanoparticles and 12-40 parts of carbon black, adding deionized water to obtain a blend, stirring the blend, and drying at 60-65 DEG C to obtain a silicon-carbon precursor; introducing nitrogen into the carbon-silicon precursor, heating to 1350-1500 DEG C, preserving heat to obtain a crude product, continuously introducing ammonia gas into the crude product, and preserving heat at 1300-1400 DEG C to obtain a primary purification product; and cooling the primary purification product to 600-650 DEG C, introducing oxygen, carrying out heat preservation to obtain a secondary purification product, and cooling the secondary purification product to obtain the product. By means of the preparation method of the high-purity silicon nitride powder, the high-purity silicon nitride powder with the purity being 99.65% or above can be prepared.
本申请涉及化工材料制备领域，具体公开了一种高纯度氮化硅粉体及其制备方法。一种高纯度氮化硅粉体的制备方法为：将30‑40份二氧化硅纳米颗粒与12‑40份炭黑混合，加入去离子水得到共混物，将共混物搅拌，在60‑65℃干燥，得到硅碳前驱体；向碳硅前驱体中通入氮气，加热至1350‑1500℃，保温，得到粗产物，继续后向粗产物中通入氨气，在1300‑1400℃下保温，得到一次提纯产物；将一次提纯产物降温至600‑650℃，通入氧气，保温，得到二次提纯产物，将二次提纯产物冷却，即得产物。本申请的一种高纯的氮化硅粉体的制备方法，能够制备出纯度为99.65%以上的高纯氮化硅粉体。
High-purity silicon nitride powder and preparation method thereof
一种高纯度氮化硅粉体及其制备方法
LIU WEIPING (Autor:in) / CHEN ZHI (Autor:in) / TAN CHENGYE (Autor:in) / ZHANG CAIGEN (Autor:in) / XIE RONGKUN (Autor:in)
16.07.2024
Patent
Elektronische Ressource
Chinesisch
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