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Preparation method of tin zinc oxide doped zirconium high-density target material
The invention relates to the technical field of target materials, in particular to a preparation method of a tin zinc oxide doped zirconium high-density target material. The preparation method comprises the following steps that tin oxide powder, zirconium oxide powder and zinc oxide powder are prepared into mixed slurry, then sanding, granulation, forming and sintering are conducted, the tin zinc oxide doped zirconium high-density target material is obtained, and the mass ratio of the tin oxide powder to the zirconium oxide powder to the zinc oxide powder is 100: (0.1-0.5): (9-11). The zinc tin oxide doped zirconium high-density target material prepared by adopting the preparation method has high relative density and low resistivity, and a film sputtered by the zinc tin oxide doped zirconium high-density target material has relatively high transmittance in a visible light range and can replace a traditional indium tin oxide target material; the method can be widely applied to the fields of semiconductor integrated circuits, LEDs, displays, touch screens, solar photovoltaics, chemical engineering and the like.
本发明涉及靶材技术领域，具体涉及一种氧化锡锌掺杂锆高密度靶材的制备方法。所述制备方法包括以下步骤：将氧化锡粉末、氧化锆粉末和氧化锌粉末制备成混合浆料，再经砂磨、造粒、成型、烧结、得到氧化锡锌掺杂锆高密度靶材，其中氧化锡粉末、氧化锆粉末和氧化锌粉末的质量比为100:0.1‑0.5:9‑11。采用本发明制备方法制备的氧化锡锌掺杂锆高密度靶材具有高相对密度，低电阻率，并且其溅射的薄膜具有在可见光范围内具有较高的透过率，可替代传统的氧化铟锡靶材，可广泛应用于半导体集成电路、LED、显示器、触摸屏、太阳能光伏和化工等领域。
Preparation method of tin zinc oxide doped zirconium high-density target material
The invention relates to the technical field of target materials, in particular to a preparation method of a tin zinc oxide doped zirconium high-density target material. The preparation method comprises the following steps that tin oxide powder, zirconium oxide powder and zinc oxide powder are prepared into mixed slurry, then sanding, granulation, forming and sintering are conducted, the tin zinc oxide doped zirconium high-density target material is obtained, and the mass ratio of the tin oxide powder to the zirconium oxide powder to the zinc oxide powder is 100: (0.1-0.5): (9-11). The zinc tin oxide doped zirconium high-density target material prepared by adopting the preparation method has high relative density and low resistivity, and a film sputtered by the zinc tin oxide doped zirconium high-density target material has relatively high transmittance in a visible light range and can replace a traditional indium tin oxide target material; the method can be widely applied to the fields of semiconductor integrated circuits, LEDs, displays, touch screens, solar photovoltaics, chemical engineering and the like.
本发明涉及靶材技术领域，具体涉及一种氧化锡锌掺杂锆高密度靶材的制备方法。所述制备方法包括以下步骤：将氧化锡粉末、氧化锆粉末和氧化锌粉末制备成混合浆料，再经砂磨、造粒、成型、烧结、得到氧化锡锌掺杂锆高密度靶材，其中氧化锡粉末、氧化锆粉末和氧化锌粉末的质量比为100:0.1‑0.5:9‑11。采用本发明制备方法制备的氧化锡锌掺杂锆高密度靶材具有高相对密度，低电阻率，并且其溅射的薄膜具有在可见光范围内具有较高的透过率，可替代传统的氧化铟锡靶材，可广泛应用于半导体集成电路、LED、显示器、触摸屏、太阳能光伏和化工等领域。
Preparation method of tin zinc oxide doped zirconium high-density target material
一种氧化锡锌掺杂锆高密度靶材的制备方法
ZENG DUNFENG (Autor:in) / WANG ZHIQIANG (Autor:in) / ZENG TAN (Autor:in) / CHEN GUANGYUAN (Autor:in)
02.07.2024
Patent
Elektronische Ressource
Chinesisch
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