Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
INDIUM OXIDE-BASED OXIDE SINTERED COMPACT AND PRODUCTION METHOD OF THE SAME
PROBLEM TO BE SOLVED: To provide an indium oxide-based sputtering target with which an optical film, useful as a transparent conductive oxide film having a refractive index of 2.1 or more and having an extinction coefficient of 4.08×10or less at the wavelength of 380 nm, can be deposited by a direct current sputtering method.SOLUTION: A sputtering target is formed by using an indium oxide-based oxide sintered compact which contains indium oxide, gallium oxide, and cerium oxide, in which the content of indium oxide, gallium oxide, and cerium oxide is 95% or more of the total amount, the ratio of the number of In atoms to the sum total of the number of In atoms, and those of Ga atoms and Ce atoms, In/(In+Ga+Ce), is 0.36-0.54, the ratio of the number of Ga atoms to the same, Ga/(In+Ga+Ce), is 0.30-0.48, and the ratio of the number of Ce atoms to the same, Ce/(In+Ga+Ce), is 0.16-0.32, and Ga and Ce are uniformly dispersed in the oxide sintered compact.
【課題】透明導電酸化物膜として有用な屈折率が２．１以上であり、かつ、波長３８０ｎｍにおける消衰係数が４．０８?１０-2以下である光学膜を、直流スパッタリング法により成膜可能な酸化インジウム系スパッタリングターゲットの提供。【解決手段】酸化インジウム、酸化ガリウム及び酸化セリウムを含有する酸化インジウム系酸化物焼結体であって、酸化インジウム、酸化ガリウム及び酸化セリウムの含有量が全体の９５％以上であり、Ｉｎ、Ｇａ及びＣｅの原子数の合計に対する、Ｉｎの原子数比：Ｉｎ／（Ｉｎ＋Ｇａ＋Ｃｅ）が０．３６〜０．５４、Ｇａの原子数の比：Ｇａ／（Ｉｎ＋Ｇａ＋Ｃｅ）が０．３０〜０．４８、Ｃｅの原子数の比：Ｃｅ／（Ｉｎ＋Ｇａ＋Ｃｅ）が０．１６〜０．３２であり、かつ、該酸化物焼結体中にＧａ及びＣｅが均一に分散している酸化インジウム系酸化物焼結体を用いて、形成するスパッタリングターゲット。【選択図】なし
INDIUM OXIDE-BASED OXIDE SINTERED COMPACT AND PRODUCTION METHOD OF THE SAME
PROBLEM TO BE SOLVED: To provide an indium oxide-based sputtering target with which an optical film, useful as a transparent conductive oxide film having a refractive index of 2.1 or more and having an extinction coefficient of 4.08×10or less at the wavelength of 380 nm, can be deposited by a direct current sputtering method.SOLUTION: A sputtering target is formed by using an indium oxide-based oxide sintered compact which contains indium oxide, gallium oxide, and cerium oxide, in which the content of indium oxide, gallium oxide, and cerium oxide is 95% or more of the total amount, the ratio of the number of In atoms to the sum total of the number of In atoms, and those of Ga atoms and Ce atoms, In/(In+Ga+Ce), is 0.36-0.54, the ratio of the number of Ga atoms to the same, Ga/(In+Ga+Ce), is 0.30-0.48, and the ratio of the number of Ce atoms to the same, Ce/(In+Ga+Ce), is 0.16-0.32, and Ga and Ce are uniformly dispersed in the oxide sintered compact.
【課題】透明導電酸化物膜として有用な屈折率が２．１以上であり、かつ、波長３８０ｎｍにおける消衰係数が４．０８?１０-2以下である光学膜を、直流スパッタリング法により成膜可能な酸化インジウム系スパッタリングターゲットの提供。【解決手段】酸化インジウム、酸化ガリウム及び酸化セリウムを含有する酸化インジウム系酸化物焼結体であって、酸化インジウム、酸化ガリウム及び酸化セリウムの含有量が全体の９５％以上であり、Ｉｎ、Ｇａ及びＣｅの原子数の合計に対する、Ｉｎの原子数比：Ｉｎ／（Ｉｎ＋Ｇａ＋Ｃｅ）が０．３６〜０．５４、Ｇａの原子数の比：Ｇａ／（Ｉｎ＋Ｇａ＋Ｃｅ）が０．３０〜０．４８、Ｃｅの原子数の比：Ｃｅ／（Ｉｎ＋Ｇａ＋Ｃｅ）が０．１６〜０．３２であり、かつ、該酸化物焼結体中にＧａ及びＣｅが均一に分散している酸化インジウム系酸化物焼結体を用いて、形成するスパッタリングターゲット。【選択図】なし
INDIUM OXIDE-BASED OXIDE SINTERED COMPACT AND PRODUCTION METHOD OF THE SAME
酸化インジウム系酸化物焼結体およびその製造方法
OSHIRO AZUSA (Autor:in) / SHIMOYAMADA TAKUYA (Autor:in) / KUWAHARA MASAKAZU (Autor:in) / SATO KEIICHI (Autor:in)
06.07.2015
Patent
Elektronische Ressource
Japanisch
INDIUM OXIDE-BASED OXIDE SINTERED COMPACT AND METHOD FOR PRODUCING SAME
| Europäisches Patentamt | 2016
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Sintered compact of indium oxide system, and transparent conductive film of indium oxide system
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