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    Piezoelectric thin film, piezoelectric thin film device, target, and methods for manufacturing piezoelectric thin film and piezoelectric thin film device

    Neue Suche nach: IKEUCHI SHINSUKE
    Neue Suche nach: YONEDA TOSHIMARO
    Neue Suche nach: MATSUKI YOSHITAKA
    Neue Suche nach: ENDO NAOYUKI

    A piezoelectric thin film does not easily generate a heterogeneous phase and exhibits good piezoelectric characteristics. The piezoelectric thin film contains a composition represented by a general formula: (1-n) (K1-xNax)mNbO3-nCaTiO3, wherein m, n, and x in the general formula are within the ranges of 0.87≤m≤0.97, 0≤n≤0.065, and 0≤x≤1.

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    Piezoelectric thin film, piezoelectric thin film device, target, and methods for manufacturing piezoelectric thin film and piezoelectric thin film device

    Neue Suche nach: IKEUCHI SHINSUKE
    Neue Suche nach: YONEDA TOSHIMARO
    Neue Suche nach: MATSUKI YOSHITAKA
    Neue Suche nach: ENDO NAOYUKI

    A piezoelectric thin film does not easily generate a heterogeneous phase and exhibits good piezoelectric characteristics. The piezoelectric thin film contains a composition represented by a general formula: (1-n) (K1-xNax)mNbO3-nCaTiO3, wherein m, n, and x in the general formula are within the ranges of 0.87≤m≤0.97, 0≤n≤0.065, and 0≤x≤1.

    Zugriff

    Download

    Piezoelectric thin film, piezoelectric thin film device, target, and methods for manufacturing piezoelectric thin film and piezoelectric thin film device

    Neue Suche nach: IKEUCHI SHINSUKE
    Neue Suche nach: YONEDA TOSHIMARO
    Neue Suche nach: MATSUKI YOSHITAKA
    Neue Suche nach: ENDO NAOYUKI

    A piezoelectric thin film does not easily generate a heterogeneous phase and exhibits good piezoelectric characteristics. The piezoelectric thin film contains a composition represented by a general formula: (1-n) (K1-xNax)mNbO3-nCaTiO3, wherein m, n, and x in the general formula are within the ranges of 0.87≤m≤0.97, 0≤n≤0.065, and 0≤x≤1.

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    Zugriff

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    Ähnliche Titel

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    Titel:

    Piezoelectric thin film, piezoelectric thin film device, target, and methods for manufacturing piezoelectric thin film and piezoelectric thin film device

    Beteiligte:

    IKEUCHI SHINSUKE (Autor:in) / YONEDA TOSHIMARO (Autor:in) / MATSUKI YOSHITAKA (Autor:in) / ENDO NAOYUKI (Autor:in)

    Erscheinungsdatum:

    04.06.2019

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  H10N / C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / H01J Elektrische Entladungsröhren oder Entladungslampen , ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS

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