ALUMINUM NITRIDE PIEZOELECTRIC THIN FILM, PIEZOELECTRIC MATERIAL, PIEZOELECTRIC COMPONENT, AND METHOD FOR MANUFACTURING ALUMINUM NITRIDE PIEZOELECTRIC THIN FILM: Fid-Bau Portal

ALUMINUM NITRIDE PIEZOELECTRIC THIN FILM, PIEZOELECTRIC MATERIAL, PIEZOELECTRIC COMPONENT, AND METHOD FOR MANUFACTURING ALUMINUM NITRIDE PIEZOELECTRIC THIN FILM

UMEDA KEIICHI / AKIYAMA MORITO / NAGASE TOSHIMI / NISHIKUBO KEIKO / HONDA ATSUSHI

Abstract

A germanium-containing aluminum nitride piezoelectric film and a method for manufacturing an aluminum nitride piezoelectric film in which a germanium-containing aluminum nitride piezoelectric film is grown on a substrate by sputtering.

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ALUMINUM NITRIDE PIEZOELECTRIC THIN FILM, PIEZOELECTRIC MATERIAL, PIEZOELECTRIC COMPONENT, AND METHOD FOR MANUFACTURING ALUMINUM NITRIDE PIEZOELECTRIC THIN FILM

UMEDA KEIICHI / AKIYAMA MORITO / NAGASE TOSHIMI / NISHIKUBO KEIKO / HONDA ATSUSHI

Abstract

ALUMINUM NITRIDE PIEZOELECTRIC THIN FILM, PIEZOELECTRIC MATERIAL, PIEZOELECTRIC COMPONENT, AND METHOD FOR MANUFACTURING ALUMINUM NITRIDE PIEZOELECTRIC THIN FILM

UMEDA KEIICHI / AKIYAMA MORITO / NAGASE TOSHIMI / NISHIKUBO KEIKO / HONDA ATSUSHI

Abstract

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Titel:

ALUMINUM NITRIDE PIEZOELECTRIC THIN FILM, PIEZOELECTRIC MATERIAL, PIEZOELECTRIC COMPONENT, AND METHOD FOR MANUFACTURING ALUMINUM NITRIDE PIEZOELECTRIC THIN FILM

Beteiligte:

UMEDA KEIICHI (Autor:in) / AKIYAMA MORITO (Autor:in) / NAGASE TOSHIMI (Autor:in) / NISHIKUBO KEIKO (Autor:in) / HONDA ATSUSHI (Autor:in)

Erscheinungsdatum:

22.12.2016

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Englisch

Klassifikation:

IPC: H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / G10K Tonerzeugungsvorrichtungen , SOUND-PRODUCING DEVICES

UMEDA KEIICHI / AKIYAMA MORITO / NAGASE TOSHIMI et al. | Europäisches Patentamt | 2019

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