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Precursor composition for forming amorphous metal oxide semiconductor layer, amorphous metal oxide semiconductor layer, method for producing same, and semiconductor device
The invention provides a precursor composition for forming an amorphous metal oxide semiconductor layer, containing a metal salt, a primary amide, and a water-based solution. An amorphous metal oxide semiconductor layer is formed by use of the composition.
Precursor composition for forming amorphous metal oxide semiconductor layer, amorphous metal oxide semiconductor layer, method for producing same, and semiconductor device
The invention provides a precursor composition for forming an amorphous metal oxide semiconductor layer, containing a metal salt, a primary amide, and a water-based solution. An amorphous metal oxide semiconductor layer is formed by use of the composition.
Precursor composition for forming amorphous metal oxide semiconductor layer, amorphous metal oxide semiconductor layer, method for producing same, and semiconductor device
HIROI YOSHIOMI (author) / MAEDA SHINICHI (author)
2020-08-25
Patent
Electronic Resource
English
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