SILICON NITRIDE SUBSTRATE, SILICON NITRIDE-METAL COMPOSITE, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR PACKAGE: Fid-Bau Portal

SILICON NITRIDE SUBSTRATE, SILICON NITRIDE-METAL COMPOSITE, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR PACKAGE

TSUGAWA YUTA / KOBASHI SEIJI / NISHIMURA KOJI

A silicon nitride substrate includes silicon nitride and magnesium, in which when a surface of the silicon nitride substrate is analyzed with an X-ray fluorescence spectrometer under the specific Condition I, XB/XA is 0.8 or more and 1.0 or less.

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SILICON NITRIDE SUBSTRATE, SILICON NITRIDE-METAL COMPOSITE, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR PACKAGE

TSUGAWA YUTA / KOBASHI SEIJI / NISHIMURA KOJI

Abstract

SILICON NITRIDE SUBSTRATE, SILICON NITRIDE-METAL COMPOSITE, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR PACKAGE

TSUGAWA YUTA / KOBASHI SEIJI / NISHIMURA KOJI

Abstract

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Titel:

SILICON NITRIDE SUBSTRATE, SILICON NITRIDE-METAL COMPOSITE, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR PACKAGE

Beteiligte:

TSUGAWA YUTA (Autor:in) / KOBASHI SEIJI (Autor:in) / NISHIMURA KOJI (Autor:in)

Erscheinungsdatum:

09.06.2022

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Englisch

Klassifikation:

IPC: C04B Kalk , LIME / G01N Untersuchen oder Analysieren von Stoffen durch Bestimmen ihrer chemischen oder physikalischen Eigenschaften , INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

TSUGAWA YUTA / KOBASHI SEIJI / NISHIMURA KOJI | Europäisches Patentamt | 2021

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