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THREE-DIMENSIONAL MEMORY DEVICES, SYSTEMS, AND METHODS FOR FORMING THE SAME
A three-dimensional (3D) memory device includes a stack, a plurality of contact structures, and a plurality of support structures. The stack in an insulating structure includes a plurality of conductive layers and a plurality of dielectric layers stacked alternatingly, and the stack includes a staircase structure. The plurality of contact structures each extends through the insulating structure and in contact with a respective conductive layer of the plurality of conductive layers in the staircase structure. The plurality of support structures extends through the stack in the staircase structure. Each support structure is in contact with one of the plurality of contact structures.
THREE-DIMENSIONAL MEMORY DEVICES, SYSTEMS, AND METHODS FOR FORMING THE SAME
A three-dimensional (3D) memory device includes a stack, a plurality of contact structures, and a plurality of support structures. The stack in an insulating structure includes a plurality of conductive layers and a plurality of dielectric layers stacked alternatingly, and the stack includes a staircase structure. The plurality of contact structures each extends through the insulating structure and in contact with a respective conductive layer of the plurality of conductive layers in the staircase structure. The plurality of support structures extends through the stack in the staircase structure. Each support structure is in contact with one of the plurality of contact structures.
THREE-DIMENSIONAL MEMORY DEVICES, SYSTEMS, AND METHODS FOR FORMING THE SAME
XIE JINGTAO (Autor:in) / YAN BINGJIE (Autor:in) / ZHANG KUN (Autor:in) / ZHOU WENXI (Autor:in) / XIA ZHILIANG (Autor:in) / HUO ZONGLIANG (Autor:in)
22.02.2024
Patent
Elektronische Ressource
Englisch
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