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Semiconductor device and ceramic circuit substrate, and producing method of semiconductor device

NISHIMOTO SHUJI / NAGATOMO YOSHIYUKI / NAGASE TOSHIYUKI

A semiconductor device comprises a circuit layer composed of a conductive material, and a semiconductor element mounted on the circuit layer, wherein an underlayer having a porosity in the range of 5 to 55% is formed on one surface of the circuit layer, a bonding layer composed of a sintered body of a bonding material including an organic substance and at least one of metal particles and metal oxide particles is formed on the underlayer, and the circuit layer and the semiconductor element are bonded together via the underlayer and the bonding layer.

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Semiconductor device and ceramic circuit substrate, and producing method of semiconductor device

NISHIMOTO SHUJI / NAGATOMO YOSHIYUKI / NAGASE TOSHIYUKI

A semiconductor device comprises a circuit layer composed of a conductive material, and a semiconductor element mounted on the circuit layer, wherein an underlayer having a porosity in the range of 5 to 55% is formed on one surface of the circuit layer, a bonding layer composed of a sintered body of a bonding material including an organic substance and at least one of metal particles and metal oxide particles is formed on the underlayer, and the circuit layer and the semiconductor element are bonded together via the underlayer and the bonding layer.

Semiconductor device and ceramic circuit substrate, and producing method of semiconductor device

NISHIMOTO SHUJI / NAGATOMO YOSHIYUKI / NAGASE TOSHIYUKI

A semiconductor device comprises a circuit layer composed of a conductive material, and a semiconductor element mounted on the circuit layer, wherein an underlayer having a porosity in the range of 5 to 55% is formed on one surface of the circuit layer, a bonding layer composed of a sintered body of a bonding material including an organic substance and at least one of metal particles and metal oxide particles is formed on the underlayer, and the circuit layer and the semiconductor element are bonded together via the underlayer and the bonding layer.

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Titel:

Semiconductor device and ceramic circuit substrate, and producing method of semiconductor device

Beteiligte:

NISHIMOTO SHUJI (Autor:in) / NAGATOMO YOSHIYUKI (Autor:in) / NAGASE TOSHIYUKI (Autor:in)

Erscheinungsdatum:

26.07.2016

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Englisch

Klassifikation:

IPC: H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / C04B Kalk , LIME

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