Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
MATERIALS - Cold-wall UHV-CVD for Si-SiGe(C) epitaxial thin films - Using a UHV-CVD system, engineers have developed a low thermal budget selective epitaxial process that delivers precise SiGe composition.
MATERIALS - Cold-wall UHV-CVD for Si-SiGe(C) epitaxial thin films - Using a UHV-CVD system, engineers have developed a low thermal budget selective epitaxial process that delivers precise SiGe composition.
MATERIALS - Cold-wall UHV-CVD for Si-SiGe(C) epitaxial thin films - Using a UHV-CVD system, engineers have developed a low thermal budget selective epitaxial process that delivers precise SiGe composition.
Mashiro, Supika (Autor:in) / Date, Hiroki / Hitomi, Satoshi / Sakai, Junro
2003
Aufsatz (Zeitschrift)
Englisch
Rapid thermal oxidation of epitaxial SiGe thin films
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Achieving a SiGe HBT epitaxial emitter with novel low thermal budget technique
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Strain relaxation through islands formation in epitaxial SiGe thin films
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Epitaxial growth of SiGe thin films by ion-beam sputtering
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Selective epitaxial growth of SiGe for strained Si transistors
| British Library Online Contents | 2006