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MATERIALS - Cold-wall UHV-CVD for Si-SiGe(C) epitaxial thin films - Using a UHV-CVD system, engineers have developed a low thermal budget selective epitaxial process that delivers precise SiGe composition.
MATERIALS - Cold-wall UHV-CVD for Si-SiGe(C) epitaxial thin films - Using a UHV-CVD system, engineers have developed a low thermal budget selective epitaxial process that delivers precise SiGe composition.
MATERIALS - Cold-wall UHV-CVD for Si-SiGe(C) epitaxial thin films - Using a UHV-CVD system, engineers have developed a low thermal budget selective epitaxial process that delivers precise SiGe composition.
Mashiro, Supika (author) / Date, Hiroki / Hitomi, Satoshi / Sakai, Junro
2003
Article (Journal)
English
Rapid thermal oxidation of epitaxial SiGe thin films
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