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Electron microscopy study of oxidation-induced defects at the silicon-silicon-dioxide interface

Correia, A. / Ballutaud, D. / Maurice, J. L. / Cornier, C. P.

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Electron microscopy study of oxidation-induced defects at the silicon-silicon-dioxide interface

Correia, A. / Ballutaud, D. / Maurice, J. L. / Cornier, C. P.

Electron microscopy study of oxidation-induced defects at the silicon-silicon-dioxide interface

Correia, A. / Ballutaud, D. / Maurice, J. L. / Cornier, C. P.

Access

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Check availability in my library

Order at Subito €

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Document information

Title:

Electron microscopy study of oxidation-induced defects at the silicon-silicon-dioxide interface

Contributors:

Correia, A. (author) / Ballutaud, D. (author) / Maurice, J. L. (author) / Cornier, C. P. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 18 ; 269

Publication date:

1993-01-01

Size:

269 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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