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    Application of deep-level transient spectroscopy for monitoring point defects in III-V semiconductors

    New search for: Kaminski, P.

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    Application of deep-level transient spectroscopy for monitoring point defects in III-V semiconductors

    New search for: Kaminski, P.

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    Access via TIB
    Check availability in my library
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    Application of deep-level transient spectroscopy for monitoring point defects in III-V semiconductors

    New search for: Kaminski, P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Application of deep-level transient spectroscopy for monitoring point defects in III-V semiconductors

    Contributors:

    Kaminski, P. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 20 ; 221

    Publication date:

    1993-01-01

    Size:

    221 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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