Reduction of carbon impurity in GaAs by photo-irradiation in atomic layer epitaxy: Fid-Bau Portal

Reduction of carbon impurity in GaAs by photo-irradiation in atomic layer epitaxy

Iwai, S. / Meguro, T. / Isshiki, H. / Sugano, T.

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Reduction of carbon impurity in GaAs by photo-irradiation in atomic layer epitaxy

Iwai, S. / Meguro, T. / Isshiki, H. / Sugano, T.

Reduction of carbon impurity in GaAs by photo-irradiation in atomic layer epitaxy

Iwai, S. / Meguro, T. / Isshiki, H. / Sugano, T.

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Order at Subito €

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Document information

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Document information

Title:

Reduction of carbon impurity in GaAs by photo-irradiation in atomic layer epitaxy

Contributors:

Iwai, S. (author) / Meguro, T. (author) / Isshiki, H. (author) / Sugano, T. (author)

Published in:

APPLIED SURFACE SCIENCE ; 79/80 ; 232

Publication date:

1994-01-01

Size:

232 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 621.35

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