Photoreflectance of strained Si~1~-~xGe~x epilayers (0.07 � x � 0.26) and comparison with spectroscopic ellipsometry: Fid-Bau Portal

Photoreflectance of strained Si~1~-~xGe~x epilayers (0.07 x 0.26) and comparison with spectroscopic ellipsometry

Carline, R. T. / Pickering, C. / Hosea, T. J. C. / Robbins, D. J.

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Photoreflectance of strained Si~1~-~xGe~x epilayers (0.07 x 0.26) and comparison with spectroscopic ellipsometry

Carline, R. T. / Pickering, C. / Hosea, T. J. C. / Robbins, D. J.

Photoreflectance of strained Si~1~-~xGe~x epilayers (0.07 x 0.26) and comparison with spectroscopic ellipsometry

Carline, R. T. / Pickering, C. / Hosea, T. J. C. / Robbins, D. J.

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Check availability in my library

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Document information

Title:

Photoreflectance of strained Si~1~-~xGe~x epilayers (0.07 x 0.26) and comparison with spectroscopic ellipsometry

Contributors:

Carline, R. T. (author) / Pickering, C. (author) / Hosea, T. J. C. (author) / Robbins, D. J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 81 ; 475

Publication date:

1994-01-01

Size:

475 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 621.35

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