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Silicon doping with modulated beam epitaxy in the growth of GaAs(111)A

Fahy, M. R. / Sato, K. / Joyce, B. A.

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Silicon doping with modulated beam epitaxy in the growth of GaAs(111)A

Fahy, M. R. / Sato, K. / Joyce, B. A.

Silicon doping with modulated beam epitaxy in the growth of GaAs(111)A

Fahy, M. R. / Sato, K. / Joyce, B. A.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Silicon doping with modulated beam epitaxy in the growth of GaAs(111)A

Contributors:

Fahy, M. R. (author) / Sato, K. (author) / Joyce, B. A. (author)

Published in:

APPLIED SURFACE SCIENCE ; 82/83 ; 14

Publication date:

1994-01-01

Size:

14 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 621.35

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