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    Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy

    New search for: Yarn, K. F.
    New search for: Wang, Y. H.
    New search for: Chen, M. S.
    New search for: Henini, M.
    New search for: Szweda, R.

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    Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy

    New search for: Yarn, K. F.
    New search for: Wang, Y. H.
    New search for: Chen, M. S.
    New search for: Henini, M.
    New search for: Szweda, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy

    New search for: Yarn, K. F.
    New search for: Wang, Y. H.
    New search for: Chen, M. S.
    New search for: Henini, M.
    New search for: Szweda, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy

    Contributors:

    Yarn, K. F. (author) / Wang, Y. H. (author) / Chen, M. S. (author) / Henini, M. / Szweda, R.

    Published in:

    Low Dimensional Structures and Devices ; 29-33

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 35

    Publication date:

    1995-01-01

    Size:

    5 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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