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Buried-oxide layer formation by high-dose oxygen-ion implantation into Si wafers: SIMOX (separation by implanted oxygen)
Buried-oxide layer formation by high-dose oxygen-ion implantation into Si wafers: SIMOX (separation by implanted oxygen)
Buried-oxide layer formation by high-dose oxygen-ion implantation into Si wafers: SIMOX (separation by implanted oxygen)
Kajiyama, K. (author) / Doyama, M. / Akahane, T. / Fujinami, M.
1995-01-01
259 pages
Article (Journal)
Unknown
DDC:
621.35
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|Ellipsometric analysis of ultrathin oxide layers on SIMOX wafers
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|British Library Online Contents | 2000
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