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    Buried-oxide layer formation by high-dose oxygen-ion implantation into Si wafers: SIMOX (separation by implanted oxygen)

    New search for: Kajiyama, K.
    New search for: Doyama, M.
    New search for: Akahane, T.
    New search for: Fujinami, M.

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    Buried-oxide layer formation by high-dose oxygen-ion implantation into Si wafers: SIMOX (separation by implanted oxygen)

    New search for: Kajiyama, K.
    New search for: Doyama, M.
    New search for: Akahane, T.
    New search for: Fujinami, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Buried-oxide layer formation by high-dose oxygen-ion implantation into Si wafers: SIMOX (separation by implanted oxygen)

    New search for: Kajiyama, K.
    New search for: Doyama, M.
    New search for: Akahane, T.
    New search for: Fujinami, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Buried-oxide layer formation by high-dose oxygen-ion implantation into Si wafers: SIMOX (separation by implanted oxygen)

    Contributors:

    Kajiyama, K. (author) / Doyama, M. / Akahane, T. / Fujinami, M.

    Published in:

    Proceedings of the Sixth International Workshop on Slow-Positron Beam Techniques for Solids and Surfaces ; 259

    APPLIED SURFACE SCIENCE ; 85

    Publication date:

    1995-01-01

    Size:

    259 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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