Formation of Si islands in the buried oxide layers of ultra-thin SIMOX structures implanted at 65 keV: Fid-Bau Portal

Formation of Si islands in the buried oxide layers of ultra-thin SIMOX structures implanted at 65 keV

Jiao, J. / Johnson, B. / Seraphin, S. / Anc, M. J. / Dolan, R. P. / Cordts, B. F.

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Formation of Si islands in the buried oxide layers of ultra-thin SIMOX structures implanted at 65 keV

Jiao, J. / Johnson, B. / Seraphin, S. / Anc, M. J. / Dolan, R. P. / Cordts, B. F.

Formation of Si islands in the buried oxide layers of ultra-thin SIMOX structures implanted at 65 keV

Jiao, J. / Johnson, B. / Seraphin, S. / Anc, M. J. / Dolan, R. P. / Cordts, B. F.

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Title:

Formation of Si islands in the buried oxide layers of ultra-thin SIMOX structures implanted at 65 keV

Contributors:

Jiao, J. (author) / Johnson, B. (author) / Seraphin, S. (author) / Anc, M. J. (author) / Dolan, R. P. (author) / Cordts, B. F. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 72 ; 150 - 155

Publication date:

2000-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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