Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Oxygen-related defects and their annealing behavior in low-dose Separation-by-IMplanted OXygen (SIMOX) wafers studied by slow positron beams

    New search for: Chen, Z. Q.
    New search for: Uedono, A.
    New search for: Ogura, A.
    New search for: Ono, H.
    New search for: Suzuki, R.
    New search for: Ohdaira, T.
    New search for: Mikado, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Oxygen-related defects and their annealing behavior in low-dose Separation-by-IMplanted OXygen (SIMOX) wafers studied by slow positron beams

    New search for: Chen, Z. Q.
    New search for: Uedono, A.
    New search for: Ogura, A.
    New search for: Ono, H.
    New search for: Suzuki, R.
    New search for: Ohdaira, T.
    New search for: Mikado, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Oxygen-related defects and their annealing behavior in low-dose Separation-by-IMplanted OXygen (SIMOX) wafers studied by slow positron beams

    New search for: Chen, Z. Q.
    New search for: Uedono, A.
    New search for: Ogura, A.
    New search for: Ono, H.
    New search for: Suzuki, R.
    New search for: Ohdaira, T.
    New search for: Mikado, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Oxygen-related defects and their annealing behavior in low-dose Separation-by-IMplanted OXygen (SIMOX) wafers studied by slow positron beams

    Contributors:

    Chen, Z. Q. (author) / Uedono, A. (author) / Ogura, A. (author) / Ono, H. (author) / Suzuki, R. (author) / Ohdaira, T. (author) / Mikado, T. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 194 ; 112-115

    Publication date:

    2002-01-01

    Size:

    4 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Buried-oxide layer formation by high-dose oxygen-ion implantation into Si wafers: SIMOX (separation by implanted oxygen)

    Kajiyama, K. | British Library Online Contents | 1995

    SIMS study of oxygen in- and out-diffusion in SIMOX wafers during thermal annealing using 18O implantation

    Hayashi, S. / Sasaki, T. / Kawamura, K. et al. | British Library Online Contents | 2003

    Study of Defect Behavior In Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy

    Fujinami, M. / Hayashi, S. | British Library Online Contents | 1995

    Oxygen-Related Defects - Positron Interaction in Si

    Fujinami, M. | British Library Online Contents | 1997

    Oxygen-related defects in the top silicon layer of SIMOX; the effect of thermal treatments

    Rivera, A. / de Nijs, J. M. / Balk, P. et al. | British Library Online Contents | 2000

    Back to top