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P-doped polycrystalline silicon films obtained at low temperature by hot-wire chemical vapor deposition

Puigdollers, J. / Cifre, J. / Polo, M. C. / Asensi, J. M.

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P-doped polycrystalline silicon films obtained at low temperature by hot-wire chemical vapor deposition

Puigdollers, J. / Cifre, J. / Polo, M. C. / Asensi, J. M.

P-doped polycrystalline silicon films obtained at low temperature by hot-wire chemical vapor deposition

Puigdollers, J. / Cifre, J. / Polo, M. C. / Asensi, J. M.

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Order at Subito €

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Document information

Title:

P-doped polycrystalline silicon films obtained at low temperature by hot-wire chemical vapor deposition

Contributors:

Puigdollers, J. (author) / Cifre, J. (author) / Polo, M. C. (author) / Asensi, J. M. (author) / Dieleman, J. / Biermann, U. K. P. / Hess, P.

Published in:

Photon-Assisted Processing of Surfaces and Thin Films ; 600

APPLIED SURFACE SCIENCE ; 86

Publication date:

1995-01-01

Size:

600 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 621.35

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