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Defect levels in n-silicon after high energy and high dose implantation of proton
Defect levels in n-silicon after high energy and high dose implantation of proton
Defect levels in n-silicon after high energy and high dose implantation of proton
Barbot, J. F. (author) / Blanchard, C. (author) / Ntsoenzok, E. (author) / Vernois, J. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 36 ; 81-84
1996-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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